Ultra-thin plasma nitrided oxide gate dielectrics for advanced MOS transistors

Florence Nathalie Cubaynes

    Research output: ThesisPhD Thesis - Research external, graduation UT

    506 Downloads (Pure)


    Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.
    Original languageEnglish
    Awarding Institution
    • University of Twente
    • Schmitz, Jurriaan, Supervisor
    • de Meyer, K., Supervisor, External person
    • Salm, Cora, Co-Supervisor
    Award date24 Jun 2004
    Place of PublicationEindhoven, The Netherlands
    Print ISBNs90-365-2059-2
    Publication statusPublished - 24 Jun 2004


    • METIS-218043
    • EWI-15754
    • IR-67298


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