Ultra-thin plasma nitrided oxide gate dielectrics for advanced MOS transistors

Florence Nathalie Cubaynes

Ultra-thin plasma nitrided oxide gate dielectrics for advanced MOS transistors

Florence Nathalie Cubaynes

Research output: Thesis › PhD Thesis - Research external, graduation UT

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Abstract

Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.

Original language	English
Awarding Institution	University of Twente
Supervisors/Advisors	Schmitz, Jurriaan, Supervisor de Meyer, K., Supervisor, External person Salm, Cora, Co-Supervisor
Award date	24 Jun 2004
Place of Publication	Eindhoven, The Netherlands
Publisher	Koninklijke Philips Electronics N.V.
Print ISBNs	90-365-2059-2
Publication status	Published - 24 Jun 2004

Keywords

METIS-218043
EWI-15754
IR-67298

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abstract = "Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.",

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Y1 - 2004/6/24

N2 - Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.

AB - Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.

KW - METIS-218043

KW - EWI-15754

KW - IR-67298

M3 - PhD Thesis - Research external, graduation UT

SN - 90-365-2059-2

PB - Koninklijke Philips Electronics N.V.

CY - Eindhoven, The Netherlands

ER -

Ultra-thin plasma nitrided oxide gate dielectrics for advanced MOS transistors

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Keywords

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