Ultrafast thermal damage mechanisms in Mo/Si based multilayers for short-wavelength Free Electron Lasers

R.A. Loch, R. Sobierajski, C. Bostedt, J. Bozek, T. Burian, J. Chalupsky, J. Gaudin, A. Graf, J. Grzonka, V. Hajkova, S. Hau-Riege, E.D. van Hattum, L. Juha, D. Kllinger, J. Krzywinski, R.A. London, Eric Louis, M. Messerschmidt, S. Moeller, T. PlocinskiA. Wawro, P. Zabierowski, Frederik Bijkerk

Research output: Contribution to conferencePosterOther research output


Multilayer coated optics are promising candidates for optical schemes at XUV & X-ray Free Electron Lasers (FELs), including the (possible) new ZFEL in The Netherlands. However, due to the extremely high photon flux of these FELs, damage of any optical surface is a possible limitation. Therefore, resistivity studies of MoSi multilayers for different wavelengths were carried out at FLASH and LCLS. The results show that the leading damage mechanism is melting of the amorphous silicon layers, followed by Mo atoms diffusion into Si, leading to molybdenum-silicide formation. Although a similar final state of damage was observed, the damage threshold appeared to be strongly wavelength dependent and is related to the absorbed energy density.
Original languageEnglish
Publication statusPublished - 16 Jan 2012
EventPhysics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands
Duration: 17 Jan 201218 Jan 2012


ConferencePhysics@FOM Veldhoven 2012


  • METIS-294426


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