Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

S. Büyükköse; B. Vratzov; Jelle van der Veen; P.V. Santos; Wilfred Gerard van der Wiel

doi:10.1063/1.4774388

Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

S. Büyükköse, B. Vratzov, Jelle van der Veen, P.V. Santos, Wilfred Gerard van der Wiel

Research output: Contribution to journal › Article › Academic › peer-review

23 Citations (Scopus)

285 Downloads (Pure)

Abstract

We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between two SiO2 layers on top of a Si substrate. Excited modes up to 23.5 GHz were observed. Depth profile calculations of the piezoelectric field show this multilayer structure to be suitable for acoustic charge transport in silicon at extremely high frequencies with moderate carrier mobility requirements.

Original language	Undefined
Pages (from-to)	013112
Number of pages	4
Journal	Applied physics letters
Volume	102
Issue number	1
DOIs	https://doi.org/10.1063/1.4774388
Publication status	Published - 9 Jan 2013

Keywords

EWI-24376
IR-89198
METIS-302679

Access to Document

10.1063/1.4774388

Wilfred_69

Cite this

@article{ee99d4833f314ba7a27c8f26e3c4f102,

title = "Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon",

abstract = "We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between two SiO2 layers on top of a Si substrate. Excited modes up to 23.5 GHz were observed. Depth profile calculations of the piezoelectric field show this multilayer structure to be suitable for acoustic charge transport in silicon at extremely high frequencies with moderate carrier mobility requirements.",

keywords = "EWI-24376, IR-89198, METIS-302679",

author = "S. B{\"u}y{\"u}kk{\"o}se and B. Vratzov and {van der Veen}, Jelle and P.V. Santos and {van der Wiel}, {Wilfred Gerard}",

note = "eemcs-eprint-24376 ",

year = "2013",

month = jan,

day = "9",

doi = "10.1063/1.4774388",

language = "Undefined",

volume = "102",

pages = "013112",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

AU - Büyükköse, S.

AU - Vratzov, B.

AU - van der Veen, Jelle

AU - Santos, P.V.

AU - van der Wiel, Wilfred Gerard

N1 - eemcs-eprint-24376

PY - 2013/1/9

Y1 - 2013/1/9

N2 - We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between two SiO2 layers on top of a Si substrate. Excited modes up to 23.5 GHz were observed. Depth profile calculations of the piezoelectric field show this multilayer structure to be suitable for acoustic charge transport in silicon at extremely high frequencies with moderate carrier mobility requirements.

AB - We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between two SiO2 layers on top of a Si substrate. Excited modes up to 23.5 GHz were observed. Depth profile calculations of the piezoelectric field show this multilayer structure to be suitable for acoustic charge transport in silicon at extremely high frequencies with moderate carrier mobility requirements.

KW - EWI-24376

KW - IR-89198

KW - METIS-302679

U2 - 10.1063/1.4774388

DO - 10.1063/1.4774388

M3 - Article

SN - 0003-6951

VL - 102

SP - 013112

JO - Applied physics letters

JF - Applied physics letters

IS - 1

ER -