Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography

S. Büyükköse, B. Vratzov, Derya Ataç, J van der Veen, P.V. Santos, Wilfred Gerard van der Wiel

    Research output: Contribution to journalArticleAcademicpeer-review

    23 Citations (Scopus)

    Abstract

    Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.
    Original languageUndefined
    Pages (from-to)315303
    Number of pages10
    JournalNanotechnology
    Volume23
    Issue number31
    DOIs
    Publication statusPublished - 17 Jul 2012

    Keywords

    • EWI-22906
    • IR-83571
    • METIS-296225

    Cite this

    Büyükköse, S. ; Vratzov, B. ; Ataç, Derya ; van der Veen, J ; Santos, P.V. ; van der Wiel, Wilfred Gerard. / Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography. In: Nanotechnology. 2012 ; Vol. 23, No. 31. pp. 315303.
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    title = "Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography",
    abstract = "Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.",
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    Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography. / Büyükköse, S.; Vratzov, B.; Ataç, Derya; van der Veen, J; Santos, P.V.; van der Wiel, Wilfred Gerard.

    In: Nanotechnology, Vol. 23, No. 31, 17.07.2012, p. 315303.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography

    AU - Büyükköse, S.

    AU - Vratzov, B.

    AU - Ataç, Derya

    AU - van der Veen, J

    AU - Santos, P.V.

    AU - van der Wiel, Wilfred Gerard

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    AB - Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.

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    KW - IR-83571

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