Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography

S. Büyükköse, B. Vratzov, Derya Ataç, J van der Veen, P.V. Santos, Wilfred Gerard van der Wiel

Research output: Contribution to journalArticleAcademicpeer-review

23 Citations (Scopus)

Abstract

Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.
Original languageUndefined
Pages (from-to)315303
Number of pages10
JournalNanotechnology
Volume23
Issue number31
DOIs
Publication statusPublished - 17 Jul 2012

Keywords

  • EWI-22906
  • IR-83571
  • METIS-296225

Cite this

Büyükköse, S. ; Vratzov, B. ; Ataç, Derya ; van der Veen, J ; Santos, P.V. ; van der Wiel, Wilfred Gerard. / Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography. In: Nanotechnology. 2012 ; Vol. 23, No. 31. pp. 315303.
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Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography. / Büyükköse, S.; Vratzov, B.; Ataç, Derya; van der Veen, J; Santos, P.V.; van der Wiel, Wilfred Gerard.

In: Nanotechnology, Vol. 23, No. 31, 17.07.2012, p. 315303.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography

AU - Büyükköse, S.

AU - Vratzov, B.

AU - Ataç, Derya

AU - van der Veen, J

AU - Santos, P.V.

AU - van der Wiel, Wilfred Gerard

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AB - Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.

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KW - IR-83571

KW - METIS-296225

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