Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography

S. Büyükköse; B. Vratzov; D. Ataç; J. van der Veen; P.V. Santos; W.G. van der Wiel

doi:10.1088/0957-4484/23/31/315303

Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography

S. Büyükköse, B. Vratzov, D. Ataç, J. van der Veen, P.V. Santos, W.G. van der Wiel

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Abstract

Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.

Original language	English
Pages (from-to)	315303
Number of pages	10
Journal	Nanotechnology
Volume	23
Issue number	31
DOIs	https://doi.org/10.1088/0957-4484/23/31/315303
Publication status	Published - 17 Jul 2012

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title = "Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography",

abstract = "Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.",

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AU - Büyükköse, S.

AU - Vratzov, B.

AU - Ataç, D.

AU - van der Veen, J.

AU - Santos, P.V.

AU - van der Wiel, W.G.

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N2 - Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.

AB - Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO2/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.

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JO - Nanotechnology

JF - Nanotechnology

IS - 31

ER -

Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography

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Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography