Ultrasonic transducer was fabricated from silicon buckled membrane using a thermo mechanical excitation and piezoresistive detection. The transducer has a 4 mm square silicon membrane, buckled with an initial deflection of 20μm, actuated by dynamically heating an aluminium ring layer, 3μm thick, with a polysilicon ring resistor. Detection is made by measuring the piezoresistive component in the polysilicon layer impedance.
|Number of pages||4|
|Publication status||Published - 9 Oct 1996|
|Event||1996 International Semiconductor Conference, CAS'96. Part 1 (of 2) - Sinaia, Romania|
Duration: 9 Oct 1996 → 12 Oct 1996
|Conference||1996 International Semiconductor Conference, CAS'96. Part 1 (of 2)|
|Period||9/10/96 → 12/10/96|
|Other||9-12 Oct 1996|