Ultrathin Fe3O4 epitaxial films on wide bandgap GaN(0001)

P.K.J. Wong; W. Zhang; W. Zhang; X.G. Cui; J. Wu; Y.B. Xu; Z.K. Tao; X. Li; Z.L. Xie; R. Zhang; G. van de Laan

doi:10.1103/PhysRevB.81.035419

Ultrathin Fe₃O₄ epitaxial films on wide bandgap GaN(0001)

P.K.J. Wong, W. Zhang, W. Zhang, X.G. Cui, J. Wu, Y.B. Xu, Z.K. Tao, X. Li, Z.L. Xie, R. Zhang, G. van de Laan

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Ultrathin films of magnetite Fe3O4 have been grown epitaxially on wurtzite wide bandgap semiconductor GaN0001 surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a 111 orientation of the Fe3O4 films and in-plane epitaxial relationship of 11¯0Fe3O4 112¯0GaN and 112¯Fe3O4 11¯00GaN with the GaN0001. X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe3O4, instead of -Fe2O3. The magnetic hysteresis loops and saturation magnetization Ms obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe3O4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance MR measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.

Original language	English
Pages (from-to)	035419
Number of pages	5
Journal	Physical review B: Condensed matter and materials physics
Volume	81
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.81.035419
Publication status	Published - 20 Jan 2010

Keywords

EWI-19586
IR-75999
METIS-279135

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10.1103/PhysRevB.81.035419

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@article{2dc18879819f4113b23c756aace82154,

title = "Ultrathin Fe3O4 epitaxial films on wide bandgap GaN(0001)",

abstract = "Ultrathin films of magnetite Fe3O4 have been grown epitaxially on wurtzite wide bandgap semiconductor GaN0001 surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a 111 orientation of the Fe3O4 films and in-plane epitaxial relationship of 11¯0Fe3O4 112¯0GaN and 112¯Fe3O4 11¯00GaN with the GaN0001. X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe3O4, instead of -Fe2O3. The magnetic hysteresis loops and saturation magnetization Ms obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe3O4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance MR measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.",

keywords = "EWI-19586, IR-75999, METIS-279135",

author = "P.K.J. Wong and W. Zhang and W. Zhang and X.G. Cui and J. Wu and Y.B. Xu and Z.K. Tao and X. Li and Z.L. Xie and R. Zhang and {van de Laan}, G.",

year = "2010",

month = jan,

day = "20",

doi = "10.1103/PhysRevB.81.035419",

language = "English",

volume = "81",

pages = "035419",

journal = "Physical review B: Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Ultrathin Fe3O4 epitaxial films on wide bandgap GaN(0001)

AU - Wong, P.K.J.

AU - Zhang, W.

AU - Cui, X.G.

AU - Wu, J.

AU - Xu, Y.B.

AU - Tao, Z.K.

AU - Li, X.

AU - Xie, Z.L.

AU - Zhang, R.

AU - van de Laan, G.

PY - 2010/1/20

Y1 - 2010/1/20

N2 - Ultrathin films of magnetite Fe3O4 have been grown epitaxially on wurtzite wide bandgap semiconductor GaN0001 surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a 111 orientation of the Fe3O4 films and in-plane epitaxial relationship of 11¯0Fe3O4 112¯0GaN and 112¯Fe3O4 11¯00GaN with the GaN0001. X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe3O4, instead of -Fe2O3. The magnetic hysteresis loops and saturation magnetization Ms obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe3O4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance MR measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.

AB - Ultrathin films of magnetite Fe3O4 have been grown epitaxially on wurtzite wide bandgap semiconductor GaN0001 surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a 111 orientation of the Fe3O4 films and in-plane epitaxial relationship of 11¯0Fe3O4 112¯0GaN and 112¯Fe3O4 11¯00GaN with the GaN0001. X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe3O4, instead of -Fe2O3. The magnetic hysteresis loops and saturation magnetization Ms obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe3O4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance MR measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.

KW - EWI-19586

KW - IR-75999

KW - METIS-279135

U2 - 10.1103/PhysRevB.81.035419

DO - 10.1103/PhysRevB.81.035419

M3 - Article

SN - 1098-0121

VL - 81

SP - 035419

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

IS - 3

ER -