Understanding Al2O3:Er3+ device performance

L. Agazzi, J. Bradley, F. Ay, Kerstin Worhoff, Markus Pollnau

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    Abstract

    Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such as amplifiers, ring lasers and a loss-less splitter were fabricated; data transmission at 170 Gbits/s and monolithic integration with SOI waveguides were demonstrated. The discrepancy between device performance and predictions deriving from the analysis of spectroscopic data prompted us to develop an Er3+ rate-equation model that, besides accounting for “slow‿ energy-transfer and upconversion processes, also considered the presence of luminescence quenching mechanisms occurring at significantly shorter time scales.
    Original languageUndefined
    Title of host publicationProceedings of the 2010 Annual Symposium of the IEEE Photonics Benelux Chapter
    Place of PublicationDelft
    PublisherIEEE Photonics Benelux Chapter
    Pages261-264
    Number of pages4
    ISBN (Print)978-90-78314-15-8
    Publication statusPublished - Nov 2010
    Event15th Annual Symposium of the IEEE Photonics Benelux Chapter 2010 - Delft, Netherlands
    Duration: 18 Nov 201019 Nov 2010
    Conference number: 15

    Publication series

    Name
    PublisherIEEE Photonics Benelux Chapter

    Conference

    Conference15th Annual Symposium of the IEEE Photonics Benelux Chapter 2010
    CountryNetherlands
    CityDelft
    Period18/11/1019/11/10

    Keywords

    • METIS-276177
    • EWI-18929
    • EC Grant Agreement nr.: FP6/017501
    • IR-74928

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