Understanding Al2O3:Er3+ device performance

L. Agazzi; J. Bradley; F. Ay; Kerstin Worhoff; Markus Pollnau

Understanding Al₂O₃:Er³⁺ device performance

L. Agazzi, J. Bradley, F. Ay, Kerstin Worhoff, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

45 Downloads (Pure)

Abstract

Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such as amplifiers, ring lasers and a loss-less splitter were fabricated; data transmission at 170 Gbits/s and monolithic integration with SOI waveguides were demonstrated. The discrepancy between device performance and predictions deriving from the analysis of spectroscopic data prompted us to develop an Er3+ rate-equation model that, besides accounting for “slow‿ energy-transfer and upconversion processes, also considered the presence of luminescence quenching mechanisms occurring at significantly shorter time scales.

Original language	Undefined
Title of host publication	Proceedings of the 2010 Annual Symposium of the IEEE Photonics Benelux Chapter
Place of Publication	Delft
Publisher	IEEE
Pages	261-264
Number of pages	4
ISBN (Print)	978-90-78314-15-8
Publication status	Published - Nov 2010
Event	15th Annual Symposium of the IEEE Photonics Benelux Chapter 2010 - Delft, Netherlands Duration: 18 Nov 2010 → 19 Nov 2010 Conference number: 15

Publication series

Name
Publisher	IEEE Photonics Benelux Chapter

Conference

Conference	15th Annual Symposium of the IEEE Photonics Benelux Chapter 2010
Country/Territory	Netherlands
City	Delft
Period	18/11/10 → 19/11/10

Keywords

METIS-276177
EWI-18929
EC Grant Agreement nr.: FP6/017501
IR-74928

Access to Document

Cite this

@inproceedings{abcd4ab91245474a9f728f97b631cb4f,

title = "Understanding Al2O3:Er3+ device performance",

abstract = "Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such as amplifiers, ring lasers and a loss-less splitter were fabricated; data transmission at 170 Gbits/s and monolithic integration with SOI waveguides were demonstrated. The discrepancy between device performance and predictions deriving from the analysis of spectroscopic data prompted us to develop an Er3+ rate-equation model that, besides accounting for “slow‿ energy-transfer and upconversion processes, also considered the presence of luminescence quenching mechanisms occurring at significantly shorter time scales.",

keywords = "METIS-276177, EWI-18929, EC Grant Agreement nr.: FP6/017501, IR-74928",

author = "L. Agazzi and J. Bradley and F. Ay and Kerstin Worhoff and Markus Pollnau",

year = "2010",

month = nov,

language = "Undefined",

isbn = "978-90-78314-15-8",

publisher = "IEEE",

pages = "261--264",

booktitle = "Proceedings of the 2010 Annual Symposium of the IEEE Photonics Benelux Chapter",

address = "United States",

note = "15th Annual Symposium of the IEEE Photonics Benelux Chapter 2010 ; Conference date: 18-11-2010 Through 19-11-2010",

}

TY - GEN

T1 - Understanding Al2O3:Er3+ device performance

AU - Agazzi, L.

AU - Bradley, J.

AU - Ay, F.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

N1 - Conference code: 15

PY - 2010/11

Y1 - 2010/11

N2 - Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such as amplifiers, ring lasers and a loss-less splitter were fabricated; data transmission at 170 Gbits/s and monolithic integration with SOI waveguides were demonstrated. The discrepancy between device performance and predictions deriving from the analysis of spectroscopic data prompted us to develop an Er3+ rate-equation model that, besides accounting for “slow‿ energy-transfer and upconversion processes, also considered the presence of luminescence quenching mechanisms occurring at significantly shorter time scales.

AB - Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such as amplifiers, ring lasers and a loss-less splitter were fabricated; data transmission at 170 Gbits/s and monolithic integration with SOI waveguides were demonstrated. The discrepancy between device performance and predictions deriving from the analysis of spectroscopic data prompted us to develop an Er3+ rate-equation model that, besides accounting for “slow‿ energy-transfer and upconversion processes, also considered the presence of luminescence quenching mechanisms occurring at significantly shorter time scales.

KW - METIS-276177

KW - EWI-18929

KW - EC Grant Agreement nr.: FP6/017501

KW - IR-74928

M3 - Conference contribution

SN - 978-90-78314-15-8

SP - 261

EP - 264

BT - Proceedings of the 2010 Annual Symposium of the IEEE Photonics Benelux Chapter

PB - IEEE

CY - Delft

T2 - 15th Annual Symposium of the IEEE Photonics Benelux Chapter 2010

Y2 - 18 November 2010 through 19 November 2010

ER -