Utilizing the {111} Plane Switch-Over Etching Process for Micro Fluid Control Applications

R.E. Oosterbroek, J.W. Berenschot, S. Schlautmann, T.S.J. Lammerink, A. van den Berg, M.C. Elwenspoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    In this paper, new possibilities are shown to fabricate micro structures with use of a simple anisotropic wet chemical etching method. The method is very accurate, cheap and puts low demands on cleanroom facilities. Due to the possibility to obtain structures like valves which have their entrance and exit channels in one wafer in-line, the method might be very valuable for integration of different fluid handling components such as valves, channels and pumps. Several structures are fabricated and a summation of other possible designs is given. These show that exploitation of the well-known anisotropic etching methods in alkaline solutions can result in more sophisticated structures than used up to now.
    Original languageEnglish
    Title of host publicationMicro Total Analysis Systems ’98
    Subtitle of host publicationProceedings of the uTAS ’98 Workshop, held in Banff, Canada, 13–16 October 1998
    EditorsD. Jed Harrison, Albert van den Berg
    PublisherKluwer Academic Publishers
    Pages137-140
    ISBN (Electronic)978-94-011-5286-0
    ISBN (Print)978-94-010-6225-1
    DOIs
    Publication statusPublished - 25 Mar 1998
    Event3rd International Workshop on Micro Total Analysis Systems, μTAS 1998 - Banff, Canada
    Duration: 13 Oct 199816 Oct 1998
    Conference number: 3

    Workshop

    Workshop3rd International Workshop on Micro Total Analysis Systems, μTAS 1998
    Abbreviated titleMicroTAS
    CountryCanada
    CityBanff
    Period13/10/9816/10/98

    Keywords

    • IR-16132
    • METIS-113017

    Fingerprint Dive into the research topics of 'Utilizing the {111} Plane Switch-Over Etching Process for Micro Fluid Control Applications'. Together they form a unique fingerprint.

    Cite this