UV-sensitive low dark-count pureb single-photon avalanche diode

Lin Qi, K. R.C. Mok, Mahdi Aminian, Edoardo Charbon, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)

Abstract

A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

Original languageEnglish
Article number6894558
Pages (from-to)3768-3774
Number of pages7
JournalIEEE transactions on electron devices
Volume61
Issue number11
DOIs
Publication statusPublished - 1 Nov 2014
Externally publishedYes

Fingerprint

Avalanche diodes
Photons
Wavelength
Boron
Chemical vapor deposition
Anodes
Diodes
Temperature
Ultraviolet Rays

Keywords

  • Avalanche breakdown
  • boron
  • chemical vapor deposition (CVD)
  • Geiger-mode avalanche photodiode
  • single-photon avalanche diode (SPAD)
  • ultrashallow junctions
  • ultraviolet (UV)

Cite this

Qi, Lin ; Mok, K. R.C. ; Aminian, Mahdi ; Charbon, Edoardo ; Nanver, Lis K. / UV-sensitive low dark-count pureb single-photon avalanche diode. In: IEEE transactions on electron devices. 2014 ; Vol. 61, No. 11. pp. 3768-3774.
@article{e3ff7880dc254a1587f6dbc99bf4f9b9,
title = "UV-sensitive low dark-count pureb single-photon avalanche diode",
abstract = "A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.",
keywords = "Avalanche breakdown, boron, chemical vapor deposition (CVD), Geiger-mode avalanche photodiode, single-photon avalanche diode (SPAD), ultrashallow junctions, ultraviolet (UV)",
author = "Lin Qi and Mok, {K. R.C.} and Mahdi Aminian and Edoardo Charbon and Nanver, {Lis K.}",
year = "2014",
month = "11",
day = "1",
doi = "10.1109/TED.2014.2351576",
language = "English",
volume = "61",
pages = "3768--3774",
journal = "IEEE transactions on electron devices",
issn = "0018-9383",
publisher = "IEEE",
number = "11",

}

UV-sensitive low dark-count pureb single-photon avalanche diode. / Qi, Lin; Mok, K. R.C.; Aminian, Mahdi; Charbon, Edoardo; Nanver, Lis K.

In: IEEE transactions on electron devices, Vol. 61, No. 11, 6894558, 01.11.2014, p. 3768-3774.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - UV-sensitive low dark-count pureb single-photon avalanche diode

AU - Qi, Lin

AU - Mok, K. R.C.

AU - Aminian, Mahdi

AU - Charbon, Edoardo

AU - Nanver, Lis K.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

AB - A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

KW - Avalanche breakdown

KW - boron

KW - chemical vapor deposition (CVD)

KW - Geiger-mode avalanche photodiode

KW - single-photon avalanche diode (SPAD)

KW - ultrashallow junctions

KW - ultraviolet (UV)

UR - http://www.scopus.com/inward/record.url?scp=84908462388&partnerID=8YFLogxK

U2 - 10.1109/TED.2014.2351576

DO - 10.1109/TED.2014.2351576

M3 - Article

VL - 61

SP - 3768

EP - 3774

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

IS - 11

M1 - 6894558

ER -