UV-sensitive low dark-count pureb single-photon avalanche diode

Lin Qi; K. R.C. Mok; Mahdi Aminian; Edoardo Charbon; Lis K. Nanver

doi:10.1109/TED.2014.2351576

UV-sensitive low dark-count pureb single-photon avalanche diode

Lin Qi^*, K. R.C. Mok, Mahdi Aminian, Edoardo Charbon, Lis K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

30 Citations (Scopus)

Abstract

A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m²). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

Original language	English
Article number	6894558
Pages (from-to)	3768-3774
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	11
DOIs	https://doi.org/10.1109/TED.2014.2351576
Publication status	Published - 1 Nov 2014
Externally published	Yes

Keywords

Avalanche breakdown
boron
chemical vapor deposition (CVD)
Geiger-mode avalanche photodiode
single-photon avalanche diode (SPAD)
ultrashallow junctions
ultraviolet (UV)

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10.1109/TED.2014.2351576

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title = "UV-sensitive low dark-count pureb single-photon avalanche diode",

abstract = "A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.",

keywords = "Avalanche breakdown, boron, chemical vapor deposition (CVD), Geiger-mode avalanche photodiode, single-photon avalanche diode (SPAD), ultrashallow junctions, ultraviolet (UV)",

author = "Lin Qi and Mok, {K. R.C.} and Mahdi Aminian and Edoardo Charbon and Nanver, {Lis K.}",

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T1 - UV-sensitive low dark-count pureb single-photon avalanche diode

AU - Qi, Lin

AU - Mok, K. R.C.

AU - Aminian, Mahdi

AU - Charbon, Edoardo

AU - Nanver, Lis K.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

AB - A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

KW - Avalanche breakdown

KW - boron

KW - chemical vapor deposition (CVD)

KW - Geiger-mode avalanche photodiode

KW - single-photon avalanche diode (SPAD)

KW - ultrashallow junctions

KW - ultraviolet (UV)

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U2 - 10.1109/TED.2014.2351576

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 6894558

ER -

UV-sensitive low dark-count pureb single-photon avalanche diode

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Keywords

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