UV-sensitive low dark-count pureb single-photon avalanche diode

Lin Qi*, K. R.C. Mok, Mahdi Aminian, Edoardo Charbon, Lis K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)

Abstract

A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of (7~μ) m2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.

Original languageEnglish
Article number6894558
Pages (from-to)3768-3774
Number of pages7
JournalIEEE transactions on electron devices
Volume61
Issue number11
DOIs
Publication statusPublished - 1 Nov 2014
Externally publishedYes

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Keywords

  • Avalanche breakdown
  • boron
  • chemical vapor deposition (CVD)
  • Geiger-mode avalanche photodiode
  • single-photon avalanche diode (SPAD)
  • ultrashallow junctions
  • ultraviolet (UV)

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