UV-sensitive low dark-count PureB single-photon avalanche diode

Lin Qi, K. R.C. Mok, Edoardo Charbon, Lis K. Nanver, Mahdi Aminian

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

11 Citations (Scopus)


A single-photon avalanche diode (SPAD) with high responsivity in the ultraviolet (UV) wavelength range has been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition to create both a nanometer-thin anode junction and robust light entrance window. The device shows high responsivity at the wavelength of 330 nm and 370 nm when operating in Geiger mode. The dark count rates (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill-factor.

Original languageEnglish
Title of host publicationIEEE SENSORS 2013 - Proceedings
ISBN (Print)9781467346405
Publication statusPublished - 1 Jan 2013
Externally publishedYes
Event12th IEEE Sensors 2013 - Renaissance Baltimore Harborplace Hotel, Baltimore, United States
Duration: 3 Nov 20136 Nov 2013
Conference number: 12


Conference12th IEEE Sensors 2013
Country/TerritoryUnited States
Internet address

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