UV-sensitive low dark-count PureB single-photon avalanche diode

Lin Qi; K. R.C. Mok; Edoardo Charbon; Lis K. Nanver; Mahdi Aminian

doi:10.1109/ICSENS.2013.6688603

UV-sensitive low dark-count PureB single-photon avalanche diode

Lin Qi, K. R.C. Mok, Edoardo Charbon, Lis K. Nanver, Mahdi Aminian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

Abstract

A single-photon avalanche diode (SPAD) with high responsivity in the ultraviolet (UV) wavelength range has been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition to create both a nanometer-thin anode junction and robust light entrance window. The device shows high responsivity at the wavelength of 330 nm and 370 nm when operating in Geiger mode. The dark count rates (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm². An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill-factor.

Original language	English
Title of host publication	IEEE SENSORS 2013 - Proceedings
Publisher	IEEE
ISBN (Print)	9781467346405
DOIs	https://doi.org/10.1109/ICSENS.2013.6688603
Publication status	Published - 1 Jan 2013
Externally published	Yes
Event	12th IEEE Sensors 2013 - Renaissance Baltimore Harborplace Hotel, Baltimore, United States Duration: 3 Nov 2013 → 6 Nov 2013 Conference number: 12 http://ieee-sensors2013.org/

Conference

Conference	12th IEEE Sensors 2013
Country/Territory	United States
City	Baltimore
Period	3/11/13 → 6/11/13
Internet address	http://ieee-sensors2013.org/

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10.1109/ICSENS.2013.6688603

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title = "UV-sensitive low dark-count PureB single-photon avalanche diode",

abstract = "A single-photon avalanche diode (SPAD) with high responsivity in the ultraviolet (UV) wavelength range has been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition to create both a nanometer-thin anode junction and robust light entrance window. The device shows high responsivity at the wavelength of 330 nm and 370 nm when operating in Geiger mode. The dark count rates (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill-factor.",

author = "Lin Qi and Mok, {K. R.C.} and Edoardo Charbon and Nanver, {Lis K.} and Mahdi Aminian",

year = "2013",

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doi = "10.1109/ICSENS.2013.6688603",

language = "English",

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note = "12th IEEE Sensors 2013 ; Conference date: 03-11-2013 Through 06-11-2013",

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AU - Qi, Lin

AU - Mok, K. R.C.

AU - Charbon, Edoardo

AU - Nanver, Lis K.

AU - Aminian, Mahdi

N1 - Conference code: 12

PY - 2013/1/1

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N2 - A single-photon avalanche diode (SPAD) with high responsivity in the ultraviolet (UV) wavelength range has been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition to create both a nanometer-thin anode junction and robust light entrance window. The device shows high responsivity at the wavelength of 330 nm and 370 nm when operating in Geiger mode. The dark count rates (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill-factor.

AB - A single-photon avalanche diode (SPAD) with high responsivity in the ultraviolet (UV) wavelength range has been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition to create both a nanometer-thin anode junction and robust light entrance window. The device shows high responsivity at the wavelength of 330 nm and 370 nm when operating in Geiger mode. The dark count rates (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill-factor.

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DO - 10.1109/ICSENS.2013.6688603

M3 - Conference contribution

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SN - 9781467346405

BT - IEEE SENSORS 2013 - Proceedings

PB - IEEE

T2 - 12th IEEE Sensors 2013

Y2 - 3 November 2013 through 6 November 2013

ER -

UV-sensitive low dark-count PureB single-photon avalanche diode

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