Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

J.-L.P.J. van der Steen; R.J.E. Hueting; G.D.J. Smit; T. Hoang; J. Holleman; Jurriaan Schmitz

doi:10.1109/LED.2007.903390

Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

J.-L.P.J. van der Steen, R.J.E. Hueting, G.D.J. Smit, T. Hoang, J. Holleman, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

The effect of quantum confinement in thin siliconon-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing temperature-dependent subthreshold characteristics of p-type devices with different silicon layer thicknesses, the offset in the valence band edge induced by spatial carrier confinement in these very thin silicon layers wasmeasured electrically. Changes in the band structure are important for future CMOS devices such as FinFETs

Original language	English
Pages (from-to)	821-824
Number of pages	4
Journal	IEEE electron device letters
Volume	28
Issue number	9
DOIs	https://doi.org/10.1109/LED.2007.903390
Publication status	Published - 1 Sep 2007

Keywords

SC-DPM: Device Physics and Modeling
Bandgap
Carrier confinement
Conduction band
Device characterization
MOSFETs
Silicon-on-insulator (SOI) technology
Subthreshold
Temperature
Valence band

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10.1109/LED.2007.903390

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@article{b230518df11241e18537717f5ccbacb5,

title = "Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs",

abstract = "The effect of quantum confinement in thin siliconon-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing temperature-dependent subthreshold characteristics of p-type devices with different silicon layer thicknesses, the offset in the valence band edge induced by spatial carrier confinement in these very thin silicon layers wasmeasured electrically. Changes in the band structure are important for future CMOS devices such as FinFETs",

keywords = "SC-DPM: Device Physics and Modeling, Bandgap, Carrier confinement, Conduction band, Device characterization, MOSFETs, Silicon-on-insulator (SOI) technology, Subthreshold, Temperature, Valence band",

author = "{van der Steen}, J.-L.P.J. and R.J.E. Hueting and G.D.J. Smit and T. Hoang and J. Holleman and Jurriaan Schmitz",

year = "2007",

month = sep,

day = "1",

doi = "10.1109/LED.2007.903390",

language = "English",

volume = "28",

pages = "821--824",

journal = "IEEE electron device letters",

issn = "0741-3106",

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TY - JOUR

T1 - Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

AU - van der Steen, J.-L.P.J.

AU - Hueting, R.J.E.

AU - Smit, G.D.J.

AU - Hoang, T.

AU - Holleman, J.

AU - Schmitz, Jurriaan

PY - 2007/9/1

Y1 - 2007/9/1

N2 - The effect of quantum confinement in thin siliconon-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing temperature-dependent subthreshold characteristics of p-type devices with different silicon layer thicknesses, the offset in the valence band edge induced by spatial carrier confinement in these very thin silicon layers wasmeasured electrically. Changes in the band structure are important for future CMOS devices such as FinFETs

AB - The effect of quantum confinement in thin siliconon-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing temperature-dependent subthreshold characteristics of p-type devices with different silicon layer thicknesses, the offset in the valence band edge induced by spatial carrier confinement in these very thin silicon layers wasmeasured electrically. Changes in the band structure are important for future CMOS devices such as FinFETs

KW - SC-DPM: Device Physics and Modeling

KW - Bandgap

KW - Carrier confinement

KW - Conduction band

KW - Device characterization

KW - MOSFETs

KW - Silicon-on-insulator (SOI) technology

KW - Subthreshold

KW - Temperature

KW - Valence band

U2 - 10.1109/LED.2007.903390

DO - 10.1109/LED.2007.903390

M3 - Article

VL - 28

SP - 821

EP - 824

JO - IEEE electron device letters

JF - IEEE electron device letters

SN - 0741-3106

IS - 9

ER -

Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

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Keywords

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