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Validity of magnetotransport detection of skyrmions in epitaxial SrRuO3 heterostructures

  • Lena Wysocki*
  • , Lin Yang
  • , Felix Gunkel
  • , Regina Dittmann
  • , Paul H.M. van Loosdrecht
  • , Ionela Lindfors-Vrejoiu*
  • *Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

A technically simple way of probing the formation of skyrmions is to measure the topological Hall resistivity that should occur in the presence of skyrmions as an additional contribution to the ordinary and anomalous Hall effect. This type of probing, lately intensively used for thin film samples, relies on the assumption that the topological Hall effect contribution can be extracted unambiguously from the measured total Hall resistivity. Ultrathin films and heterostructures of the 4⁢𝑑 ferromagnet SrRuO3 have stirred up a lot of attention after the observation of anomalies in the Hall resistivity, which resembled a topological Hall effect contribution. These anomalies, first reported for bilayers in which the SrRuO3 was interfaced with the strong spin-orbit coupled oxide SrIrO3, were attributed to the formation of tiny Néel-type skyrmions. Here we present the investigation of heterostructures with two magnetically decoupled and electrically parallel connected SrRuO3 layers. The two SrRuO3 layers deliberately have different thicknesses, which affects the coercive field and ferromagnetic transition temperature of the two layers, and the magnitude and temperature dependence of their anomalous Hall constants. The SrRuO3 layers were separated by ultrathin layers of either the strong spin-orbit coupling oxide SrIrO3 or of the large band-gap insulator SrZrO3. Our magnetic and magnetotransport studies confirm the additivity of the anomalous Hall transverse voltages for the parallel conducting channels originating from the two ferromagnetic SrRuO3 layers as well as the possibility to tune the global anomalous Hall resistivity by magnetic field, temperature, or structural modifications at the epitaxial all-oxide interfaces. The Hall voltage loops of these two-layer heterostructures demonstrate the possibility to generate humplike structures in the Hall voltage loops of SrRuO3 heterostructures without the formation of skyrmions and emphasize that the detection of skyrmions only by Hall measurements can be misleading.
Original languageEnglish
Article number054402
Number of pages9
JournalPhysical Review Materials
Volume4
Issue number5
Early online date4 May 2020
DOIs
Publication statusPublished - May 2020
Externally publishedYes

Keywords

  • n/a OA procedure

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