Van der Waals integration of silicene and hexagonal boron nitride

Frank Bert Wiggers, Antoine Fleurence, Kohei Aoyagi, Takahiro Yonezawa, Yukiko Yamada-Takamura, Haifeng Feng, Jincheng Zhuang, Yi Du, Alexey Y. Kovalgin, M.P. de Jong

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Abstract

Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.
Original languageEnglish
Article number035001
Journal2D Materials
DOIs
Publication statusPublished - 5 Apr 2019

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Boron nitride
boron nitrides
Electronic properties
Silicon
electronics
Atoms
Graphite
Fermions
Scanning tunneling microscopy
Photoelectron spectroscopy
Graphene
silicon
atoms
scanning tunneling microscopy
Fabrication
Oxidation
graphene
fermions
insulators
photoelectron spectroscopy

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Wiggers, F. B., Fleurence, A., Aoyagi, K., Yonezawa, T., Yamada-Takamura, Y., Feng, H., ... de Jong, M. P. (2019). Van der Waals integration of silicene and hexagonal boron nitride. 2D Materials, [035001]. https://doi.org/10.1088/2053-1583/ab0a29
Wiggers, Frank Bert ; Fleurence, Antoine ; Aoyagi, Kohei ; Yonezawa, Takahiro ; Yamada-Takamura, Yukiko ; Feng, Haifeng ; Zhuang, Jincheng ; Du, Yi ; Kovalgin, Alexey Y. ; de Jong, M.P. / Van der Waals integration of silicene and hexagonal boron nitride. In: 2D Materials. 2019.
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abstract = "Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.",
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Wiggers, FB, Fleurence, A, Aoyagi, K, Yonezawa, T, Yamada-Takamura, Y, Feng, H, Zhuang, J, Du, Y, Kovalgin, AY & de Jong, MP 2019, 'Van der Waals integration of silicene and hexagonal boron nitride' 2D Materials. https://doi.org/10.1088/2053-1583/ab0a29

Van der Waals integration of silicene and hexagonal boron nitride. / Wiggers, Frank Bert; Fleurence, Antoine; Aoyagi, Kohei; Yonezawa, Takahiro; Yamada-Takamura, Yukiko; Feng, Haifeng; Zhuang, Jincheng; Du, Yi; Kovalgin, Alexey Y.; de Jong, M.P.

In: 2D Materials, 05.04.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Van der Waals integration of silicene and hexagonal boron nitride

AU - Wiggers, Frank Bert

AU - Fleurence, Antoine

AU - Aoyagi, Kohei

AU - Yonezawa, Takahiro

AU - Yamada-Takamura, Yukiko

AU - Feng, Haifeng

AU - Zhuang, Jincheng

AU - Du, Yi

AU - Kovalgin, Alexey Y.

AU - de Jong, M.P.

PY - 2019/4/5

Y1 - 2019/4/5

N2 - Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.

AB - Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.

U2 - https://doi.org/10.1088/2053-1583/ab0a29

DO - https://doi.org/10.1088/2053-1583/ab0a29

M3 - Article

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

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Wiggers FB, Fleurence A, Aoyagi K, Yonezawa T, Yamada-Takamura Y, Feng H et al. Van der Waals integration of silicene and hexagonal boron nitride. 2D Materials. 2019 Apr 5. 035001. https://doi.org/10.1088/2053-1583/ab0a29