Van der Waals integration of silicene and hexagonal boron nitride

Frank Bert Wiggers, Antoine Fleurence, Kohei Aoyagi, Takahiro Yonezawa, Yukiko Yamada-Takamura, Haifeng Feng, Jincheng Zhuang, Yi Du, Alexey Y. Kovalgin, M.P. de Jong

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    Abstract

    Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.
    Original languageEnglish
    Article number035001
    Journal2D Materials
    Volume6
    Issue number3
    Early online date25 Feb 2019
    DOIs
    Publication statusPublished - 5 Apr 2019

    Fingerprint

    Boron nitride
    boron nitrides
    Electronic properties
    Silicon
    electronics
    Atoms
    Graphite
    Fermions
    Scanning tunneling microscopy
    Photoelectron spectroscopy
    Graphene
    silicon
    atoms
    scanning tunneling microscopy
    Fabrication
    Oxidation
    graphene
    fermions
    insulators
    photoelectron spectroscopy

    Cite this

    Wiggers, F. B., Fleurence, A., Aoyagi, K., Yonezawa, T., Yamada-Takamura, Y., Feng, H., ... de Jong, M. P. (2019). Van der Waals integration of silicene and hexagonal boron nitride. 2D Materials, 6(3), [035001]. https://doi.org/10.1088/2053-1583/ab0a29
    Wiggers, Frank Bert ; Fleurence, Antoine ; Aoyagi, Kohei ; Yonezawa, Takahiro ; Yamada-Takamura, Yukiko ; Feng, Haifeng ; Zhuang, Jincheng ; Du, Yi ; Kovalgin, Alexey Y. ; de Jong, M.P. / Van der Waals integration of silicene and hexagonal boron nitride. In: 2D Materials. 2019 ; Vol. 6, No. 3.
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    abstract = "Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.",
    author = "Wiggers, {Frank Bert} and Antoine Fleurence and Kohei Aoyagi and Takahiro Yonezawa and Yukiko Yamada-Takamura and Haifeng Feng and Jincheng Zhuang and Yi Du and Kovalgin, {Alexey Y.} and {de Jong}, M.P.",
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    Wiggers, FB, Fleurence, A, Aoyagi, K, Yonezawa, T, Yamada-Takamura, Y, Feng, H, Zhuang, J, Du, Y, Kovalgin, AY & de Jong, MP 2019, 'Van der Waals integration of silicene and hexagonal boron nitride', 2D Materials, vol. 6, no. 3, 035001. https://doi.org/10.1088/2053-1583/ab0a29

    Van der Waals integration of silicene and hexagonal boron nitride. / Wiggers, Frank Bert; Fleurence, Antoine; Aoyagi, Kohei; Yonezawa, Takahiro; Yamada-Takamura, Yukiko; Feng, Haifeng; Zhuang, Jincheng; Du, Yi; Kovalgin, Alexey Y.; de Jong, M.P.

    In: 2D Materials, Vol. 6, No. 3, 035001, 05.04.2019.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Van der Waals integration of silicene and hexagonal boron nitride

    AU - Wiggers, Frank Bert

    AU - Fleurence, Antoine

    AU - Aoyagi, Kohei

    AU - Yonezawa, Takahiro

    AU - Yamada-Takamura, Yukiko

    AU - Feng, Haifeng

    AU - Zhuang, Jincheng

    AU - Du, Yi

    AU - Kovalgin, Alexey Y.

    AU - de Jong, M.P.

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    AB - Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0001) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.

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    Wiggers FB, Fleurence A, Aoyagi K, Yonezawa T, Yamada-Takamura Y, Feng H et al. Van der Waals integration of silicene and hexagonal boron nitride. 2D Materials. 2019 Apr 5;6(3). 035001. https://doi.org/10.1088/2053-1583/ab0a29