Varactor topologies for RF adaptivity with improved power handling and linearity

K. Buisman*, C. Huang, A. Akhnoukh, M. Marchetti, L. C.N. De Vreede, L. E. Larson, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

24 Citations (Scopus)


Ultra linear silicon-on-glass varactor topologies with improved power handling and linearity have been realized. The resulting components include integrated bias networks and provide excellent low-loss performance for large capacitances (e.g. C=20pF Q>100 at 2GHz with Vcont=2V). Using a novel center tap circuit the linearity has been improved for narrowband two-tone signals yielding measured IIP3V values above 75V for tone spacings >10kHz. By implementing two varactor stacks in series with integrated bias networks the power handing improves 4x, while the IIP3V doubles. The resulting devices can be used as flip-chip components enabling linear adaptive wireless applications.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Number of pages4
Publication statusPublished - 2 Oct 2007
Externally publishedYes
EventInternational Microwave Symposium 2007 - Honolulu, United States
Duration: 3 Jun 20079 Jun 2007


ConferenceInternational Microwave Symposium 2007
Abbreviated titleIMS 2007
Country/TerritoryUnited States


  • Adaptive systems
  • Distortion
  • Nonlinearities
  • Tuners
  • Varactors


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