Varactor topologies for RF adaptivity with improved power handling and linearity

K. Buisman; C. Huang; A. Akhnoukh; M. Marchetti; L. C.N. De Vreede; L. E. Larson; L. K. Nanver

doi:10.1109/MWSYM.2007.380416

Varactor topologies for RF adaptivity with improved power handling and linearity

K. Buisman^*, C. Huang, A. Akhnoukh, M. Marchetti, L. C.N. De Vreede, L. E. Larson, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

24 Citations (Scopus)

Abstract

Ultra linear silicon-on-glass varactor topologies with improved power handling and linearity have been realized. The resulting components include integrated bias networks and provide excellent low-loss performance for large capacitances (e.g. C=20pF Q>100 at 2GHz with V_cont=2V). Using a novel center tap circuit the linearity has been improved for narrowband two-tone signals yielding measured IIP3V values above 75V for tone spacings >10kHz. By implementing two varactor stacks in series with integrated bias networks the power handing improves 4x, while the IIP3V doubles. The resulting devices can be used as flip-chip components enabling linear adaptive wireless applications.

Original language	English
Title of host publication	2007 IEEE MTT-S International Microwave Symposium Digest
Pages	319-322
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2007.380416
Publication status	Published - 2 Oct 2007
Externally published	Yes
Event	International Microwave Symposium 2007 - Honolulu, United States Duration: 3 Jun 2007 → 9 Jun 2007

Conference

Conference	International Microwave Symposium 2007
Abbreviated title	IMS 2007
Country/Territory	United States
City	Honolulu
Period	3/06/07 → 9/06/07

Keywords

Adaptive systems
Distortion
Nonlinearities
Tuners
Varactors

Access to Document

10.1109/MWSYM.2007.380416

Cite this

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title = "Varactor topologies for RF adaptivity with improved power handling and linearity",

abstract = "Ultra linear silicon-on-glass varactor topologies with improved power handling and linearity have been realized. The resulting components include integrated bias networks and provide excellent low-loss performance for large capacitances (e.g. C=20pF Q>100 at 2GHz with Vcont=2V). Using a novel center tap circuit the linearity has been improved for narrowband two-tone signals yielding measured IIP3V values above 75V for tone spacings >10kHz. By implementing two varactor stacks in series with integrated bias networks the power handing improves 4x, while the IIP3V doubles. The resulting devices can be used as flip-chip components enabling linear adaptive wireless applications.",

keywords = "Adaptive systems, Distortion, Nonlinearities, Tuners, Varactors",

author = "K. Buisman and C. Huang and A. Akhnoukh and M. Marchetti and {De Vreede}, {L. C.N.} and Larson, {L. E.} and Nanver, {L. K.}",

year = "2007",

month = oct,

day = "2",

doi = "10.1109/MWSYM.2007.380416",

language = "English",

isbn = "1424406889",

pages = "319--322",

booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",

note = "International Microwave Symposium 2007, IMS 2007 ; Conference date: 03-06-2007 Through 09-06-2007",

}

Buisman, K, Huang, C, Akhnoukh, A, Marchetti, M, De Vreede, LCN, Larson, LE & Nanver, LK 2007, Varactor topologies for RF adaptivity with improved power handling and linearity. in 2007 IEEE MTT-S International Microwave Symposium Digest., 4263811, pp. 319-322, International Microwave Symposium 2007, Honolulu, Hawaii, United States, 3/06/07. https://doi.org/10.1109/MWSYM.2007.380416

TY - GEN

T1 - Varactor topologies for RF adaptivity with improved power handling and linearity

AU - Buisman, K.

AU - Huang, C.

AU - Akhnoukh, A.

AU - Marchetti, M.

AU - De Vreede, L. C.N.

AU - Larson, L. E.

AU - Nanver, L. K.

PY - 2007/10/2

Y1 - 2007/10/2

N2 - Ultra linear silicon-on-glass varactor topologies with improved power handling and linearity have been realized. The resulting components include integrated bias networks and provide excellent low-loss performance for large capacitances (e.g. C=20pF Q>100 at 2GHz with Vcont=2V). Using a novel center tap circuit the linearity has been improved for narrowband two-tone signals yielding measured IIP3V values above 75V for tone spacings >10kHz. By implementing two varactor stacks in series with integrated bias networks the power handing improves 4x, while the IIP3V doubles. The resulting devices can be used as flip-chip components enabling linear adaptive wireless applications.

AB - Ultra linear silicon-on-glass varactor topologies with improved power handling and linearity have been realized. The resulting components include integrated bias networks and provide excellent low-loss performance for large capacitances (e.g. C=20pF Q>100 at 2GHz with Vcont=2V). Using a novel center tap circuit the linearity has been improved for narrowband two-tone signals yielding measured IIP3V values above 75V for tone spacings >10kHz. By implementing two varactor stacks in series with integrated bias networks the power handing improves 4x, while the IIP3V doubles. The resulting devices can be used as flip-chip components enabling linear adaptive wireless applications.

KW - Adaptive systems

KW - Distortion

KW - Nonlinearities

KW - Tuners

KW - Varactors

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U2 - 10.1109/MWSYM.2007.380416

DO - 10.1109/MWSYM.2007.380416

M3 - Conference contribution

AN - SCOPUS:34748864862

SN - 1424406889

SN - 9781424406883

SP - 319

EP - 322

BT - 2007 IEEE MTT-S International Microwave Symposium Digest

T2 - International Microwave Symposium 2007

Y2 - 3 June 2007 through 9 June 2007

ER -

Varactor topologies for RF adaptivity with improved power handling and linearity

Abstract

Conference

Keywords

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