Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

M. Popadić; F. Sarubbi; T. L.M. Scholtes; L. K. Nanver

doi:10.1149/1.2813514

Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

M. Popadić^*, F. Sarubbi, T. L.M. Scholtes, L. K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

1 Citation (Scopus)

Abstract

With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during low-temperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here to depend on both the As surface coverage and the arsine partial pressure. Knowledge of these dependencies was employed in simultaneous As deposition and Si epi growth to obtain highlycontrollable doping profiles by appropriate variation of the arsine partial pressure.

Original language	English
Pages (from-to)	393-399
Number of pages	7
Journal	ECS transactions
Volume	4
Issue number	1
DOIs	https://doi.org/10.1149/1.2813514
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006 - Ouro Preto, Brazil Duration: 28 Aug 2006 → 1 Sept 2006 Conference number: 21

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title = "Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD",

abstract = "With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during low-temperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here to depend on both the As surface coverage and the arsine partial pressure. Knowledge of these dependencies was employed in simultaneous As deposition and Si epi growth to obtain highlycontrollable doping profiles by appropriate variation of the arsine partial pressure.",

author = "M. Popadi{\'c} and F. Sarubbi and Scholtes, {T. L.M.} and Nanver, {L. K.}",

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T1 - Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

AU - Popadić, M.

AU - Sarubbi, F.

AU - Scholtes, T. L.M.

AU - Nanver, L. K.

N1 - Conference code: 21

PY - 2006/12/1

Y1 - 2006/12/1

N2 - With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during low-temperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here to depend on both the As surface coverage and the arsine partial pressure. Knowledge of these dependencies was employed in simultaneous As deposition and Si epi growth to obtain highlycontrollable doping profiles by appropriate variation of the arsine partial pressure.

AB - With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during low-temperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here to depend on both the As surface coverage and the arsine partial pressure. Knowledge of these dependencies was employed in simultaneous As deposition and Si epi growth to obtain highlycontrollable doping profiles by appropriate variation of the arsine partial pressure.

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U2 - 10.1149/1.2813514

DO - 10.1149/1.2813514

M3 - Conference article

AN - SCOPUS:33847656073

SN - 1938-5862

VL - 4

SP - 393

EP - 399

JO - ECS transactions

JF - ECS transactions

IS - 1

T2 - 21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006

Y2 - 28 August 2006 through 1 September 2006

ER -

Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

Abstract

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