Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

A. Šakić*, L.K. Nanver, G. van Veen, K. Kooijman, P. Vogelsang, T.L.M. Scholtes, W. de Boer, W.H.A. Wien, S. Milosavljević, C.Th.H. Heerkens, T. Knežević, I. Spee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)

Abstract

A new silicon electron detector technology for Scanning Electron Microscopy, based on ultrashallow p+n boron-layer photodiodes, features nm-thin anodes enabling low-energy electron detection with record-high sensitivity down to 200 eV. Designs with segmented, closely-packed photodiodes and through-wafer apertures allow flexible configurations for optimal material and/or topographical contrasts. A high scanning speed is obtained by growing a well-controlled, lightly-doped, tens-of-microns-thick epi-layer for low capacitance, and by patterning a conductive grid directly on the photosensitive surface for low series resistance.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
PublisherIEEE
ISBN (Electronic)978-1-4244-7420-2, 978-1-4244-7419-6
ISBN (Print)978-1-4424-7418-5
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameInternational Electron Devices Meeting
PublisherIEEE
Volume2010
ISSN (Print)0163-1918
ISSN (Electronic)2156-017X

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
Abbreviated titleIEDM
CountryUnited States
CitySan Francisco
Period6/12/108/12/10

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