@inproceedings{3d9cab6d058b4f57977ff2b2fae9504b,
title = "Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection",
abstract = "A new silicon electron detector technology for Scanning Electron Microscopy, based on ultrashallow p+n boron-layer photodiodes, features nm-thin anodes enabling low-energy electron detection with record-high sensitivity down to 200 eV. Designs with segmented, closely-packed photodiodes and through-wafer apertures allow flexible configurations for optimal material and/or topographical contrasts. A high scanning speed is obtained by growing a well-controlled, lightly-doped, tens-of-microns-thick epi-layer for low capacitance, and by patterning a conductive grid directly on the photosensitive surface for low series resistance.",
author = "A. {\v S}aki{\'c} and L.K. Nanver and {van Veen}, G. and K. Kooijman and P. Vogelsang and T.L.M. Scholtes and {de Boer}, W. and W.H.A. Wien and S. Milosavljevi{\'c} and C.Th.H. Heerkens and T. Kne{\v z}evi{\'c} and I. Spee",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/IEDM.2010.5703458",
language = "English",
isbn = "978-1-4424-7418-5",
series = "International Electron Devices Meeting",
publisher = "IEEE",
booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",
address = "United States",
note = "2010 IEEE International Electron Devices Meeting, IEDM 2010, IEDM ; Conference date: 06-12-2010 Through 08-12-2010",
}