VIPMOS, a buried local injector for EPROMs

R.C.M. Wijburg*, G.J. Hemink, L. Praamsma, J. Middelhoek

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    21 Downloads (Pure)

    Abstract

    A highly effective substrate hot electron injection EPROM device can be made using a buried injector, which operates in punch-through mode. The buried injector is formed by a local overlap of the N-well and P-well of a retrograde twin-well CMOS-process. As the VIPMOS-EPROM is compatible with VLSI-processing and the danger of latch-up doesn't exist, the VIPMOS-structure may be used in VLSI-applications. Due to an efficient electron supply mechanism as well as a high injection probability, programming rates of 1V/μs can be obtained.

    Original languageEnglish
    Title of host publicationESSDERC '89
    Subtitle of host publicationProceedings of the 19th European Solid State Device Research Conference
    EditorsHeiner Ryssel, Anton Heuberger, Peter Lange
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages915-918
    Number of pages4
    ISBN (Print)978-0-387-51000-2
    DOIs
    Publication statusPublished - 1989
    Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
    Duration: 11 Sep 198914 Sep 1989
    Conference number: 19

    Publication series

    NameEuropean Solid-State Device Research Conference
    PublisherIEEE
    Volume1989
    ISSN (Print)1930-8876

    Conference

    Conference19th European Solid State Device Research Conference, ESSDERC 1989
    Abbreviated titleESSDERC
    CountryGermany
    CityBerlin
    Period11/09/8914/09/89

    Keywords

    • EPROM
    • Voltage
    • Intrusion detection
    • Substrate hot electron injection
    • Channel hot electron injection
    • Current measurement
    • Stress
    • Acceleration
    • Current density

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