VIPMOS-A novel buried injector structure for EPROM applications

Rutger C. Wijburg, Gertjan J. Hemink, Jan Middelhoek, Hans Wallinga, Ton J. Mouthaan

    Research output: Contribution to journalArticleAcademicpeer-review

    20 Citations (Scopus)
    90 Downloads (Pure)

    Abstract

    A buried injector is proposed as a source of electrons for substrate hot electrons injection. To enhance the compatibility with VLSI processing, the buried injector is formed by the local overlap of the n-well and p-well of a retrograde twin-well CMOS process. The injector is activated by means of punchthrough. This mechanism allows the realization of a selective injector without increasing the latchup susceptibility. The p-well profile controls the punchthrough voltage. The high injection probability and efficient electron supply mechanism lead to oxide current densities up to 1.0 Å.×cm-2. Programming times of 10 ¿s have been measured on nonoptimized cells. The realization of a structure for 5-V-only digital and analog applications is viable. A model of the structure for implementation in a circuit simulator, such as SPICE, is presented
    Original languageEnglish
    Pages (from-to)111-120
    Number of pages10
    JournalIEEE transactions on electron devices
    Volume38
    Issue number1
    DOIs
    Publication statusPublished - 1991

    Fingerprint Dive into the research topics of 'VIPMOS-A novel buried injector structure for EPROM applications'. Together they form a unique fingerprint.

  • Cite this

    Wijburg, R. C., Hemink, G. J., Middelhoek, J., Wallinga, H., & Mouthaan, T. J. (1991). VIPMOS-A novel buried injector structure for EPROM applications. IEEE transactions on electron devices, 38(1), 111-120. https://doi.org/10.1109/16.65744