@inproceedings{6285f8196a3c4176853710cff9f9d5ee,
title = "Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses",
abstract = "Silicon nanometer-scale diodes have been fabricated to emit light in the visible range at low power consumption. Such structures are candidates for emitter elements in Si-based optical interconnect schemes. Spectral measurements of Electroluminescence (EL) on the reverse-biased nanometer-scale diodes brought into breakdown have been carried out over the photon energy range of 1.4-2.8 eV. Previously proposed mechanisms for avalanche emission from conventional silicon p-n junctions are discussed in order to understand the origin of the emission. Also the stability of the diodes has been tested. Results indicate that our nanometer-scale diodes are basically high quality devices. Furthermore due to the nanometer-scale dimensions, very high electrical fields and current densities are possible at low power consumption. This makes these diodes an excellent candidate to be utilized as a light source in Si-based sensors and actuator applications",
keywords = "METIS-113963, IR-17075",
author = "V.E. Houtsma and J. Holleman and N.A. Akil and {Le Minh}, P. and V. Zieren and {van den Berg}, Albert and Hans Wallinga and P.H. Woerlee",
year = "1999",
month = oct,
day = "5",
doi = "10.1109/SMICND.1999.810586",
language = "English",
isbn = "9780780351394",
publisher = "IEEE",
pages = "461--465",
booktitle = "CAS'99",
address = "United States",
note = "International Semiconductor Conference, CAS 1999 ; Conference date: 05-10-1999 Through 09-10-1999",
}