Abstract
In the study of LF noise in MOSFETS, it has
become clear that Random Telegraph Signals (RTS) are
dominant. When a MOSFET is subjected to large-signal
excitation, the RTS noise is influenced. In this paper, we
present different visualizations of the transient behaviour of the RTS.
Original language | English |
---|---|
Title of host publication | Proceedings SAFE & ProRISC 2004 |
Place of Publication | Utrecht |
Publisher | STW |
Number of pages | 6 |
ISBN (Print) | 90-73461-43-X |
Publication status | Published - Nov 2004 |
Event | 15th Annual Workshop on Circuits, Systems and Signal Processing, ProRisc 2004 - Veldhoven, Netherlands Duration: 25 Nov 2004 → 26 Nov 2004 Conference number: 15 |
Conference
Conference | 15th Annual Workshop on Circuits, Systems and Signal Processing, ProRisc 2004 |
---|---|
Abbreviated title | ProRisc |
Country/Territory | Netherlands |
City | Veldhoven |
Period | 25/11/04 → 26/11/04 |
Keywords
- LF noise
- Large signal excitation
- MOSFET
- Random telegraph signals