Abstract
In the study of LF noise in MOSFETS, it has
become clear that Random Telegraph Signals (RTS) are
dominant. When a MOSFET is subjected to large-signal
excitation, the RTS noise is influenced. In this paper, we
present different visualizations of the transient behaviour of the RTS.
| Original language | English |
|---|---|
| Title of host publication | Proceedings SAFE & ProRISC 2004 |
| Place of Publication | Utrecht |
| Publisher | STW |
| Number of pages | 6 |
| ISBN (Print) | 90-73461-43-X |
| Publication status | Published - Nov 2004 |
| Event | 15th Annual Workshop on Circuits, Systems and Signal Processing, ProRisc 2004 - Veldhoven, Netherlands Duration: 25 Nov 2004 → 26 Nov 2004 Conference number: 15 |
Conference
| Conference | 15th Annual Workshop on Circuits, Systems and Signal Processing, ProRisc 2004 |
|---|---|
| Abbreviated title | ProRisc |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 25/11/04 → 26/11/04 |
Keywords
- LF noise
- Large signal excitation
- MOSFET
- Random telegraph signals