Voltage dependence of giant tunnel magnetoresistance in triple barrier magnetic systems

A. Vedyayev, N. Ryzhanova, R. Vlutters, B. Dieny, N. Strelkov

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    11 Citations (Scopus)

    Abstract

    Abstract. A quantum theory of the dependence on bias voltage of the tunnel magnetoresistance in a triple barrier system of the form MOMOMOM is presented. The Ms represent magnetic metallic layers and the Os are thin tunnel barriers. The two inner layers form spin-dependent quantum wells. The relative orientation of the magnetization in the successive magnetic layers can be changed from parallel to antiparallel. For a particular thickness of the inner metallic layers, a very large change of resistance occurs between the parallel and antiparallel magnetic configurations due to the spin dependence of the resonant tunnelling in these layers. It is shown that oscillations in the voltage dependence of the magnetoresistance amplitude take place associated with oscillations between resonant and antiresonant tunnelling as a function of the electrons' energy.
    Original languageUndefined
    Pages (from-to)1797-1804
    Number of pages8
    JournalJournal of physics: Condensed matter
    Volume12
    Publication statusPublished - 2000

    Keywords

    • SMI-NE: From 2006 in EWI-NE
    • IR-63041
    • SMI-SPINTRONICS
    • EWI-5656

    Cite this

    Vedyayev, A., Ryzhanova, N., Vlutters, R., Dieny, B., & Strelkov, N. (2000). Voltage dependence of giant tunnel magnetoresistance in triple barrier magnetic systems. Journal of physics: Condensed matter, 12, 1797-1804.