Vortex generation and sensing in microfabricated surface channels

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    1 Citation (Scopus)

    Abstract

    We realized a structure that is able to generate vortices inside a microfluidic channel. The structure is compatible with surface channel technology, enabling integration with other devices on the same chip. Characterization of the structure is done by scanning the top membrane of the channel using laser Doppler velocimetry. A novel method for finding the phase relation between the incoherent measured scan points is developed. Initial measurements show that the structure is able to act as a vortex flow sensor, since the vortex frequency is dependent on the flow velocity, making this the first microfluidic vortex flow sensor with a characterized range from 735 mg/h to 1335 mg/h with a sensitivity of 100 Hz/(mg/h). The structure can also be used for passive mixing.
    Original languageUndefined
    Title of host publication29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
    Place of PublicationShanghai
    PublisherIEEE
    Pages812-815
    Number of pages4
    ISBN (Print)978-1-5090-1973-1
    DOIs
    Publication statusPublished - 24 Jan 2016
    Event29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 - Shanghai, China
    Duration: 24 Jan 201628 Jan 2016
    Conference number: 29

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
    Abbreviated titleMEMS
    CountryChina
    CityShanghai
    Period24/01/1628/01/16

    Keywords

    • EWI-26890
    • METIS-316861
    • IR-100171

    Cite this

    Alveringh, D., Sanders, R. G. P., Wiegerink, R. J., & Lötters, J. C. (2016). Vortex generation and sensing in microfabricated surface channels. In 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 (pp. 812-815). Shanghai: IEEE. https://doi.org/10.1109/MEMSYS.2016.7421753