VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Vahid Mohammadi, Lin Qi, Negin Golshani, Caroline K.R. Mok, Wiebe de Boer, Amir Sammak, Jaber Derakhshandeh, Johan van der Cingel, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)

Abstract

Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p +n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.

Original languageEnglish
Article number6651737
Pages (from-to)1545-1547
Number of pages3
JournalIEEE electron device letters
Volume34
Issue number12
DOIs
Publication statusPublished - 1 Dec 2013
Externally publishedYes

Keywords

  • Boron deposition
  • Charged-particle detectors
  • Low-energy electrons
  • Radiation detectors
  • Si photodiodes
  • Ultraviolet-light detectors

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