Abstract
Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p +n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.
Original language | English |
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Article number | 6651737 |
Pages (from-to) | 1545-1547 |
Number of pages | 3 |
Journal | IEEE electron device letters |
Volume | 34 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Dec 2013 |
Externally published | Yes |
Keywords
- Boron deposition
- Charged-particle detectors
- Low-energy electrons
- Radiation detectors
- Si photodiodes
- Ultraviolet-light detectors