VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Vahid Mohammadi; Lin Qi; Negin Golshani; Caroline K.R. Mok; Wiebe de Boer; Amir Sammak; Jaber Derakhshandeh; Johan van der Cingel; Lis K. Nanver

doi:10.1109/LED.2013.2287221

VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Vahid Mohammadi, Lin Qi, Negin Golshani, Caroline K.R. Mok, Wiebe de Boer, Amir Sammak, Jaber Derakhshandeh, Johan van der Cingel, Lis K. Nanver

Research output: Contribution to journal › Article › Academic › peer-review

24 Citations (Scopus)

Abstract

Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p ⁺n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.

Original language	English
Article number	6651737
Pages (from-to)	1545-1547
Number of pages	3
Journal	IEEE electron device letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1109/LED.2013.2287221
Publication status	Published - 1 Dec 2013
Externally published	Yes

Keywords

Boron deposition
Charged-particle detectors
Low-energy electrons
Radiation detectors
Si photodiodes
Ultraviolet-light detectors

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10.1109/LED.2013.2287221

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title = "VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition",

abstract = "Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p +n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.",

keywords = "Boron deposition, Charged-particle detectors, Low-energy electrons, Radiation detectors, Si photodiodes, Ultraviolet-light detectors",

author = "Vahid Mohammadi and Lin Qi and Negin Golshani and Mok, {Caroline K.R.} and {de Boer}, Wiebe and Amir Sammak and Jaber Derakhshandeh and {van der Cingel}, Johan and Nanver, {Lis K.}",

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doi = "10.1109/LED.2013.2287221",

language = "English",

volume = "34",

pages = "1545--1547",

journal = "IEEE electron device letters",

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VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition. / Mohammadi, Vahid; Qi, Lin; Golshani, Negin; Mok, Caroline K.R.; de Boer, Wiebe; Sammak, Amir; Derakhshandeh, Jaber; van der Cingel, Johan; Nanver, Lis K.

In: IEEE electron device letters, Vol. 34, No. 12, 6651737, 01.12.2013, p. 1545-1547.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

AU - Mohammadi, Vahid

AU - Qi, Lin

AU - Golshani, Negin

AU - Mok, Caroline K.R.

AU - de Boer, Wiebe

AU - Sammak, Amir

AU - Derakhshandeh, Jaber

AU - van der Cingel, Johan

AU - Nanver, Lis K.

PY - 2013/12/1

Y1 - 2013/12/1

N2 - Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p +n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.

AB - Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p +n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.

KW - Boron deposition

KW - Charged-particle detectors

KW - Low-energy electrons

KW - Radiation detectors

KW - Si photodiodes

KW - Ultraviolet-light detectors

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U2 - 10.1109/LED.2013.2287221

DO - 10.1109/LED.2013.2287221

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SP - 1545

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JO - IEEE electron device letters

JF - IEEE electron device letters

SN - 0741-3106

IS - 12

M1 - 6651737

ER -

VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Abstract

Keywords

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