Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

H.A.C. Tilmans, H. Ziad, Henricus V. Jansen, O. Di Monaco, A. Jourdain, W. De Raedt, X. Rottenberg, E. De Backer, A. Decoussernaeker, K. Baert

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    54 Citations (Scopus)
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    Abstract

    Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as the bonding and sealing material. Measurements show that the influence of the wafer-level package on the RF performance can be made very small
    Original languageEnglish
    Title of host publicationProceedings International Electron Devices Meeting
    Subtitle of host publicationTechnical Digest
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Number of pages4
    ISBN (Print)0-7803-7050-3
    DOIs
    Publication statusPublished - 2 Dec 2001
    EventInternational Electron Devices Meeting, IEDM 2001 - Washington, United States
    Duration: 2 Dec 20015 Dec 2001

    Conference

    ConferenceInternational Electron Devices Meeting, IEDM 2001
    Abbreviated titleIEDM
    CountryUnited States
    CityWashington
    Period2/12/015/12/01

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  • Cite this

    Tilmans, H. A. C., Ziad, H., Jansen, H. V., Di Monaco, O., Jourdain, A., De Raedt, W., ... Baert, K. (2001). Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab. In Proceedings International Electron Devices Meeting: Technical Digest Piscataway, NJ: IEEE. https://doi.org/10.1109/IEDM.2001.979663