Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

H.A.C. Tilmans; H. Ziad; Henricus V. Jansen; O. Di Monaco; A. Jourdain; W. De Raedt; X. Rottenberg; E. De Backer; A. Decoussernaeker; K. Baert

doi:10.1109/IEDM.2001.979663

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

H.A.C. Tilmans
, H. Ziad
, Henricus V. Jansen
, O. Di Monaco
, A. Jourdain
, W. De Raedt
, X. Rottenberg
, E. De Backer
, A. Decoussernaeker
, K. Baert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

60 Citations (Scopus)

49 Downloads (Pure)

Abstract

Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as the bonding and sealing material. Measurements show that the influence of the wafer-level package on the RF performance can be made very small

Original language	English
Title of host publication	Proceedings International Electron Devices Meeting
Subtitle of host publication	Technical Digest
Place of Publication	Piscataway, NJ
Publisher	IEEE
Number of pages	4
ISBN (Print)	0-7803-7050-3
DOIs	https://doi.org/10.1109/IEDM.2001.979663
Publication status	Published - 2 Dec 2001
Event	International Electron Devices Meeting, IEDM 2001 - Washington, United States Duration: 2 Dec 2001 → 5 Dec 2001

Conference

Conference	International Electron Devices Meeting, IEDM 2001
Abbreviated title	IEDM
Country/Territory	United States
City	Washington
Period	2/12/01 → 5/12/01

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

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10.1109/IEDM.2001.979663

Cite this

@inproceedings{8e200f8e40844f26ad4b1e4e4ad26091,

title = "Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab",

abstract = "Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as the bonding and sealing material. Measurements show that the influence of the wafer-level package on the RF performance can be made very small",

author = "H.A.C. Tilmans and H. Ziad and Jansen, \{Henricus V.\} and \{Di Monaco\}, O. and A. Jourdain and \{De Raedt\}, W. and X. Rottenberg and \{De Backer\}, E. and A. Decoussernaeker and K. Baert",

year = "2001",

month = dec,

day = "2",

doi = "10.1109/IEDM.2001.979663",

language = "English",

isbn = "0-7803-7050-3",

booktitle = "Proceedings International Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "International Electron Devices Meeting, IEDM 2001, IEDM ; Conference date: 02-12-2001 Through 05-12-2001",

}

Tilmans, HAC, Ziad, H, Jansen, HV, Di Monaco, O, Jourdain, A, De Raedt, W, Rottenberg, X, De Backer, E, Decoussernaeker, A & Baert, K 2001, Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab. in Proceedings International Electron Devices Meeting: Technical Digest. IEEE, Piscataway, NJ, International Electron Devices Meeting, IEDM 2001, Washington, District of Columbia, United States, 2/12/01. https://doi.org/10.1109/IEDM.2001.979663

TY - GEN

T1 - Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

AU - Tilmans, H.A.C.

AU - Ziad, H.

AU - Jansen, Henricus V.

AU - Di Monaco, O.

AU - Jourdain, A.

AU - De Raedt, W.

AU - Rottenberg, X.

AU - De Backer, E.

AU - Decoussernaeker, A.

AU - Baert, K.

PY - 2001/12/2

Y1 - 2001/12/2

N2 - Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as the bonding and sealing material. Measurements show that the influence of the wafer-level package on the RF performance can be made very small

AB - Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as the bonding and sealing material. Measurements show that the influence of the wafer-level package on the RF performance can be made very small

U2 - 10.1109/IEDM.2001.979663

DO - 10.1109/IEDM.2001.979663

M3 - Conference contribution

SN - 0-7803-7050-3

BT - Proceedings International Electron Devices Meeting

PB - IEEE

CY - Piscataway, NJ

T2 - International Electron Devices Meeting, IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

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