Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

M.D. Nguyen; R. Tiggelaar; T. Aukes; G. Rijnders; G. Roelof

doi:10.1088/1742-6596/922/1/012022

Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

M.D. Nguyen
, R. Tiggelaar
, T. Aukes
, G. Rijnders
, G. Roelof

Research output: Contribution to journal › Conference article › Academic › peer-review

16 Citations (Scopus)

347 Downloads (Pure)

Abstract

Piezoelectric lead-zirconate-Titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO₂/Si(001) wafers using large-Area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d _33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e _31f = -18.8 C/m² ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

Original language	English
Article number	012022
Journal	Journal of physics: Conference series
Volume	922
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/922/1/012022
Publication status	Published - 23 Nov 2017

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SDG 9 Industry, Innovation, and Infrastructure

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10.1088/1742-6596/922/1/012022Licence: CC BY

Wafer-scale growthFinal published version, 1.06 MBLicence: CC BY

Cite this

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title = "Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators",

abstract = "Piezoelectric lead-zirconate-Titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-Area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8\%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6\%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8\%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.",

author = "M.D. Nguyen and R. Tiggelaar and T. Aukes and G. Rijnders and G. Roelof",

year = "2017",

month = nov,

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doi = "10.1088/1742-6596/922/1/012022",

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journal = "Journal of physics: Conference series",

issn = "1742-6588",

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TY - JOUR

T1 - Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

AU - Nguyen, M.D.

AU - Tiggelaar, R.

AU - Aukes, T.

AU - Rijnders, G.

AU - Roelof, G.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - Piezoelectric lead-zirconate-Titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-Area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

AB - Piezoelectric lead-zirconate-Titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-Area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

UR - https://www.scopus.com/pages/publications/85037703475

U2 - 10.1088/1742-6596/922/1/012022

DO - 10.1088/1742-6596/922/1/012022

M3 - Conference article

AN - SCOPUS:85037703475

SN - 1742-6588

VL - 922

JO - Journal of physics: Conference series

JF - Journal of physics: Conference series

IS - 1

M1 - 012022

ER -

Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

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