Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions

Yasser Pordeli; Bjorn T.H. Borgelink; Bernhard Y. van der Wel; Erwin J.W. Berenschot; Tamer Dogan; Meint J. de Boer; Christiaan M. Bruinink; Harold J.W. Zandvliet; Han J.G.E. Gardeniers; Niels R. Tas

doi:10.1109/TRANSDUCERS.2019.8808559

Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions

Yasser Pordeli, Bjorn T.H. Borgelink, Bernhard Y. van der Wel, Erwin J.W. Berenschot, Tamer Dogan, Meint J. de Boer, Christiaan M. Bruinink, Harold J.W. Zandvliet, Han J.G.E. Gardeniers, Niels R. Tas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

7 Downloads (Pure)

Abstract

This paper introduces a new self-aligned procedure for wafer-scale fabrication of curved metal-insulator-semiconductor (cMIS) tunneling junctions with nanometric lateral dimensions. The fabrication process is based on the use of an array of silicon nano-pillars embedded in a silicon nitride membrane. The junctions are formed at the apex of pyramidal pits and the tunneling window is defined using self-aligned corner lithography. The current densities of the functional cMIS-junctions with a 2.5 nm thick tunneling oxide layer are in the theoretically expected range.

Original language	English
Title of host publication	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	2376-2379
Number of pages	4
ISBN (Electronic)	9781728120072
ISBN (Print)	978-1-5386-8104-6
DOIs	https://doi.org/10.1109/TRANSDUCERS.2019.8808559
Publication status	Published - Jun 2019
Event	20th International Conference on Solid-State Sensors, Actuators and Microsystems (ICSSSAM) TRANSDUCERS 2019 and EUROSENSORS XXXIII - Estrel Berlin - Hotel & Congress Center, Berlin, Germany Duration: 23 Jun 2019 → 27 Jun 2019 Conference number: 20

Conference

Conference	20th International Conference on Solid-State Sensors, Actuators and Microsystems (ICSSSAM) TRANSDUCERS 2019 and EUROSENSORS XXXIII
Abbreviated title	ICSSSAM
Country/Territory	Germany
City	Berlin
Period	23/06/19 → 27/06/19

Keywords

corner lithography
geometrical asymmetry
MIS tunneling junction
silicon nanomachining

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TRANSDUCERS.2019.8808559

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Pordeli, Y., Borgelink, B. T. H., van der Wel, B. Y., Berenschot, E. J. W., Dogan, T., de Boer, M. J., Bruinink, C. M., Zandvliet, H. J. W., Gardeniers, H. J. G. E., & Tas, N. R. (2019). Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII (pp. 2376-2379). Article 8808559 IEEE. https://doi.org/10.1109/TRANSDUCERS.2019.8808559

@inproceedings{16907f5c499f4b61bb672e0acdcd4568,

title = "Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions",

abstract = "This paper introduces a new self-aligned procedure for wafer-scale fabrication of curved metal-insulator-semiconductor (cMIS) tunneling junctions with nanometric lateral dimensions. The fabrication process is based on the use of an array of silicon nano-pillars embedded in a silicon nitride membrane. The junctions are formed at the apex of pyramidal pits and the tunneling window is defined using self-aligned corner lithography. The current densities of the functional cMIS-junctions with a 2.5 nm thick tunneling oxide layer are in the theoretically expected range.",

keywords = "corner lithography, geometrical asymmetry, MIS tunneling junction, silicon nanomachining",

author = "Yasser Pordeli and Borgelink, {Bjorn T.H.} and {van der Wel}, {Bernhard Y.} and Berenschot, {Erwin J.W.} and Tamer Dogan and {de Boer}, {Meint J.} and Bruinink, {Christiaan M.} and Zandvliet, {Harold J.W.} and Gardeniers, {Han J.G.E.} and Tas, {Niels R.}",

year = "2019",

month = jun,

doi = "10.1109/TRANSDUCERS.2019.8808559",

language = "English",

isbn = "978-1-5386-8104-6",

pages = "2376--2379",

booktitle = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",

publisher = "IEEE",

address = "United States",

note = "20th International Conference on Solid-State Sensors, Actuators and Microsystems (ICSSSAM) TRANSDUCERS 2019 and EUROSENSORS XXXIII, ICSSSAM ; Conference date: 23-06-2019 Through 27-06-2019",

}

Pordeli, Y, Borgelink, BTH, van der Wel, BY, Berenschot, EJW, Dogan, T, de Boer, MJ, Bruinink, CM, Zandvliet, HJW , Gardeniers, HJGE & Tas, NR 2019, Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions. in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII., 8808559, IEEE, Piscataway, NJ, pp. 2376-2379, 20th International Conference on Solid-State Sensors, Actuators and Microsystems (ICSSSAM) TRANSDUCERS 2019 and EUROSENSORS XXXIII, Berlin, Berlin, Germany, 23/06/19. https://doi.org/10.1109/TRANSDUCERS.2019.8808559

Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions. / Pordeli, Yasser; Borgelink, Bjorn T.H.; van der Wel, Bernhard Y. et al.
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Piscataway, NJ: IEEE, 2019. p. 2376-2379 8808559.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions

AU - Pordeli, Yasser

AU - Borgelink, Bjorn T.H.

AU - van der Wel, Bernhard Y.

AU - Berenschot, Erwin J.W.

AU - Dogan, Tamer

AU - de Boer, Meint J.

AU - Bruinink, Christiaan M.

AU - Zandvliet, Harold J.W.

AU - Gardeniers, Han J.G.E.

AU - Tas, Niels R.

N1 - Conference code: 20

PY - 2019/6

Y1 - 2019/6

N2 - This paper introduces a new self-aligned procedure for wafer-scale fabrication of curved metal-insulator-semiconductor (cMIS) tunneling junctions with nanometric lateral dimensions. The fabrication process is based on the use of an array of silicon nano-pillars embedded in a silicon nitride membrane. The junctions are formed at the apex of pyramidal pits and the tunneling window is defined using self-aligned corner lithography. The current densities of the functional cMIS-junctions with a 2.5 nm thick tunneling oxide layer are in the theoretically expected range.

AB - This paper introduces a new self-aligned procedure for wafer-scale fabrication of curved metal-insulator-semiconductor (cMIS) tunneling junctions with nanometric lateral dimensions. The fabrication process is based on the use of an array of silicon nano-pillars embedded in a silicon nitride membrane. The junctions are formed at the apex of pyramidal pits and the tunneling window is defined using self-aligned corner lithography. The current densities of the functional cMIS-junctions with a 2.5 nm thick tunneling oxide layer are in the theoretically expected range.

KW - corner lithography

KW - geometrical asymmetry

KW - MIS tunneling junction

KW - silicon nanomachining

UR - http://www.scopus.com/inward/record.url?scp=85071917351&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2019.8808559

DO - 10.1109/TRANSDUCERS.2019.8808559

M3 - Conference contribution

SN - 978-1-5386-8104-6

SP - 2376

EP - 2379

BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

PB - IEEE

CY - Piscataway, NJ

T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems (ICSSSAM) TRANSDUCERS 2019 and EUROSENSORS XXXIII

Y2 - 23 June 2019 through 27 June 2019

ER -

Pordeli Y, Borgelink BTH, van der Wel BY, Berenschot EJW, Dogan T, de Boer MJ et al. Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Piscataway, NJ: IEEE. 2019. p. 2376-2379. 8808559 doi: 10.1109/TRANSDUCERS.2019.8808559

Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions

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Keywords

UN SDGs

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