Wafer-through access trenches for surface channel technology

Jarno Groenesteijn; Meint J. de Boer; Theodorus S.J. Lammerink; Joost Conrad Lötters; Remco J. Wiegerink

Wafer-through access trenches for surface channel technology

Jarno Groenesteijn, Meint J. de Boer, Theodorus S.J. Lammerink, Joost Conrad Lötters, Remco J. Wiegerink

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.

Original language	Undefined
Title of host publication	1st International Conference on Microfluidic Handling Systems
Place of Publication	Enschede
Publisher	University of Twente
Pages	-
Number of pages	2
ISBN (Print)	not assigned
Publication status	Published - 10 Oct 2012
Event	1st International Conference on MicroFluidic Handling Systems, MFHS 2012 - Enschede, Netherlands Duration: 10 Oct 2012 → 12 Oct 2012 Conference number: 1 https://www.utwente.nl/en/eemcs/mfhs2012/

Publication series

Name
Publisher	University of Twente

Conference

Conference	1st International Conference on MicroFluidic Handling Systems, MFHS 2012
Abbreviated title	MFHS
Country/Territory	Netherlands
City	Enschede
Period	10/10/12 → 12/10/12
Internet address	https://www.utwente.nl/en/eemcs/mfhs2012/

Keywords

METIS-293279
EWI-22802
Surface channel technology
IR-83556
access holes

Access to Document

http://eprints.eemcs.utwente.nl/secure2/22802/01/MFHS2012_Abstract_Access_Trench.pdf

Cite this

@inproceedings{1c7389efdbdc4285be110fe50a1d24ca,

title = "Wafer-through access trenches for surface channel technology",

abstract = "A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.",

keywords = "METIS-293279, EWI-22802, Surface channel technology, IR-83556, access holes",

author = "Jarno Groenesteijn and {de Boer}, {Meint J.} and Lammerink, {Theodorus S.J.} and L{\"o}tters, {Joost Conrad} and Wiegerink, {Remco J.}",

note = "http://www.utwente.nl/ewi/mfhs2012/MFHS2012%20Proceedings.pdf; 1st International Conference on MicroFluidic Handling Systems, MFHS 2012 ; Conference date: 10-10-2012 Through 12-10-2012",

year = "2012",

month = oct,

day = "10",

language = "Undefined",

isbn = "not assigned",

publisher = "University of Twente",

pages = "--",

booktitle = "1st International Conference on Microfluidic Handling Systems",

address = "Netherlands",

url = "https://www.utwente.nl/en/eemcs/mfhs2012/",

}

Groenesteijn, J, de Boer, MJ, Lammerink, TSJ , Lötters, JC & Wiegerink, RJ 2012, Wafer-through access trenches for surface channel technology. in 1st International Conference on Microfluidic Handling Systems. University of Twente, Enschede, pp. -, 1st International Conference on MicroFluidic Handling Systems, MFHS 2012, Enschede, Netherlands, 10/10/12. <http://eprints.eemcs.utwente.nl/secure2/22802/01/MFHS2012_Abstract_Access_Trench.pdf>

TY - GEN

T1 - Wafer-through access trenches for surface channel technology

AU - Groenesteijn, Jarno

AU - de Boer, Meint J.

AU - Lammerink, Theodorus S.J.

AU - Lötters, Joost Conrad

AU - Wiegerink, Remco J.

N1 - Conference code: 1

PY - 2012/10/10

Y1 - 2012/10/10

N2 - A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.

AB - A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.

KW - METIS-293279

KW - EWI-22802

KW - Surface channel technology

KW - IR-83556

KW - access holes

M3 - Conference contribution

SN - not assigned

SP - -

BT - 1st International Conference on Microfluidic Handling Systems

PB - University of Twente

CY - Enschede

T2 - 1st International Conference on MicroFluidic Handling Systems, MFHS 2012

Y2 - 10 October 2012 through 12 October 2012

ER -