Wafer-through access trenches for surface channel technology

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    A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.
    Original languageUndefined
    Title of host publication1st International Conference on Microfluidic Handling Systems
    Place of PublicationEnschede
    PublisherUniversity of Twente
    Number of pages2
    ISBN (Print)not assigned
    Publication statusPublished - 10 Oct 2012
    Event1st International Conference on MicroFluidic Handling Systems, MFHS 2012 - Enschede, Netherlands
    Duration: 10 Oct 201212 Oct 2012
    Conference number: 1

    Publication series

    PublisherUniversity of Twente


    Conference1st International Conference on MicroFluidic Handling Systems, MFHS 2012
    Abbreviated titleMFHS
    Internet address


    • METIS-293279
    • EWI-22802
    • Surface channel technology
    • IR-83556
    • access holes

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