Wafer-through access trenches for surface channel technology

Jarno Groenesteijn, Meint J. de Boer, Theodorus S.J. Lammerink, Joost Conrad Lötters, Remco J. Wiegerink

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.
Original languageUndefined
Title of host publication1st International Conference on Microfluidic Handling Systems
Place of PublicationEnschede
PublisherUniversity of Twente
Pages-
Number of pages2
ISBN (Print)not assigned
Publication statusPublished - 10 Oct 2012
Event1st International Conference on MicroFluidic Handling Systems, MFHS 2012 - Enschede, Netherlands
Duration: 10 Oct 201212 Oct 2012
Conference number: 1
https://www.utwente.nl/en/eemcs/mfhs2012/

Publication series

Name
PublisherUniversity of Twente

Conference

Conference1st International Conference on MicroFluidic Handling Systems, MFHS 2012
Abbreviated titleMFHS
CountryNetherlands
CityEnschede
Period10/10/1212/10/12
Internet address

Keywords

  • METIS-293279
  • EWI-22802
  • Surface channel technology
  • IR-83556
  • access holes

Cite this

Groenesteijn, J., de Boer, M. J., Lammerink, T. S. J., Lötters, J. C., & Wiegerink, R. J. (2012). Wafer-through access trenches for surface channel technology. In 1st International Conference on Microfluidic Handling Systems (pp. -). Enschede: University of Twente.
Groenesteijn, Jarno ; de Boer, Meint J. ; Lammerink, Theodorus S.J. ; Lötters, Joost Conrad ; Wiegerink, Remco J. / Wafer-through access trenches for surface channel technology. 1st International Conference on Microfluidic Handling Systems. Enschede : University of Twente, 2012. pp. -
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abstract = "A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.",
keywords = "METIS-293279, EWI-22802, Surface channel technology, IR-83556, access holes",
author = "Jarno Groenesteijn and {de Boer}, {Meint J.} and Lammerink, {Theodorus S.J.} and L{\"o}tters, {Joost Conrad} and Wiegerink, {Remco J.}",
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publisher = "University of Twente",
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Groenesteijn, J, de Boer, MJ, Lammerink, TSJ, Lötters, JC & Wiegerink, RJ 2012, Wafer-through access trenches for surface channel technology. in 1st International Conference on Microfluidic Handling Systems. University of Twente, Enschede, pp. -, 1st International Conference on MicroFluidic Handling Systems, MFHS 2012, Enschede, Netherlands, 10/10/12.

Wafer-through access trenches for surface channel technology. / Groenesteijn, Jarno; de Boer, Meint J.; Lammerink, Theodorus S.J.; Lötters, Joost Conrad; Wiegerink, Remco J.

1st International Conference on Microfluidic Handling Systems. Enschede : University of Twente, 2012. p. -.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Wafer-through access trenches for surface channel technology

AU - Groenesteijn, Jarno

AU - de Boer, Meint J.

AU - Lammerink, Theodorus S.J.

AU - Lötters, Joost Conrad

AU - Wiegerink, Remco J.

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PY - 2012/10/10

Y1 - 2012/10/10

N2 - A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.

AB - A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.

KW - METIS-293279

KW - EWI-22802

KW - Surface channel technology

KW - IR-83556

KW - access holes

M3 - Conference contribution

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BT - 1st International Conference on Microfluidic Handling Systems

PB - University of Twente

CY - Enschede

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Groenesteijn J, de Boer MJ, Lammerink TSJ, Lötters JC, Wiegerink RJ. Wafer-through access trenches for surface channel technology. In 1st International Conference on Microfluidic Handling Systems. Enschede: University of Twente. 2012. p. -