Wavelength selection for multilayer coatings for the lithography generation beyond EUVL

Igor Alexandrovich Makhotkin; E. Zoethout; Eric Louis; S.N. Yakunin; S. Muellender; Frederik Bijkerk

doi:10.1117/12.918036

Wavelength selection for multilayer coatings for the lithography generation beyond EUVL

Igor Alexandrovich Makhotkin, E. Zoethout, Eric Louis, S.N. Yakunin, S. Muellender, Frederik Bijkerk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength range, based on measured B and B4C optical constants. We show that the wavelength of optimal single mirror reflectance for boron based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelengthintegrated reflectance for ideal 10-multilayer-mirror stacks show that a B-based optical column can be optimized for a wavelength larger than 6.65 nm.

Original language	English
Title of host publication	Extreme Ultraviolet (EUV) Lithography III
Editors	Patrick P. Naulleau, Obert R. Wood II
Place of Publication	Bellingham, WA
Publisher	SPIE
Number of pages	5
ISBN (Print)	9780819489784
DOIs	https://doi.org/10.1117/12.918036
Publication status	Published - 13 Mar 2012
Event	SPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012 - San Jose Convention Center and San Jose Marriott, San Jose, United States Duration: 12 Feb 2012 → 16 Feb 2012 Conference number: 3

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	8322
ISSN (Print)	0277-786X

Conference

Conference	SPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012
Country/Territory	United States
City	San Jose
Period	12/02/12 → 16/02/12

Keywords

PhysicsIndustriele produktie en technologie
IR-81732

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10.1117/12.918036

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title = "Wavelength selection for multilayer coatings for the lithography generation beyond EUVL",

abstract = "The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength range, based on measured B and B4C optical constants. We show that the wavelength of optimal single mirror reflectance for boron based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelengthintegrated reflectance for ideal 10-multilayer-mirror stacks show that a B-based optical column can be optimized for a wavelength larger than 6.65 nm.",

keywords = "PhysicsIndustriele produktie en technologie, IR-81732",

author = "Makhotkin, {Igor Alexandrovich} and E. Zoethout and Eric Louis and S.N. Yakunin and S. Muellender and Frederik Bijkerk",

year = "2012",

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doi = "10.1117/12.918036",

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series = "Proceedings of SPIE",

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editor = "Naulleau, {Patrick P.} and {Wood II}, {Obert R.}",

booktitle = "Extreme Ultraviolet (EUV) Lithography III",

address = "United States",

note = "SPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012 ; Conference date: 12-02-2012 Through 16-02-2012",

}

Makhotkin, IA, Zoethout, E, Louis, E, Yakunin, SN, Muellender, S & Bijkerk, F 2012, Wavelength selection for multilayer coatings for the lithography generation beyond EUVL. in PP Naulleau & OR Wood II (eds), Extreme Ultraviolet (EUV) Lithography III., 832213, Proceedings of SPIE, vol. 8322, SPIE, Bellingham, WA, SPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012, San Jose, California, United States, 12/02/12. https://doi.org/10.1117/12.918036

Wavelength selection for multilayer coatings for the lithography generation beyond EUVL. / Makhotkin, Igor Alexandrovich; Zoethout, E.; Louis, Eric; Yakunin, S.N.; Muellender, S.; Bijkerk, Frederik.

Extreme Ultraviolet (EUV) Lithography III. ed. / Patrick P. Naulleau; Obert R. Wood II. Bellingham, WA : SPIE, 2012. 832213 (Proceedings of SPIE; Vol. 8322).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Wavelength selection for multilayer coatings for the lithography generation beyond EUVL

AU - Makhotkin, Igor Alexandrovich

AU - Zoethout, E.

AU - Louis, Eric

AU - Yakunin, S.N.

AU - Muellender, S.

AU - Bijkerk, Frederik

N1 - Conference code: 3

PY - 2012/3/13

Y1 - 2012/3/13

N2 - The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength range, based on measured B and B4C optical constants. We show that the wavelength of optimal single mirror reflectance for boron based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelengthintegrated reflectance for ideal 10-multilayer-mirror stacks show that a B-based optical column can be optimized for a wavelength larger than 6.65 nm.

AB - The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength range, based on measured B and B4C optical constants. We show that the wavelength of optimal single mirror reflectance for boron based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelengthintegrated reflectance for ideal 10-multilayer-mirror stacks show that a B-based optical column can be optimized for a wavelength larger than 6.65 nm.

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M3 - Conference contribution

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T3 - Proceedings of SPIE

BT - Extreme Ultraviolet (EUV) Lithography III

A2 - Naulleau, Patrick P.

A2 - Wood II, Obert R.

PB - SPIE

CY - Bellingham, WA

T2 - SPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012

Y2 - 12 February 2012 through 16 February 2012

ER -

Wavelength selection for multilayer coatings for the lithography generation beyond EUVL

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