Wavelength selection for multilayer coatings for the lithography generation beyond EUVL

Igor Alexandrovich Makhotkin, E. Zoethout, Eric Louis, S.N. Yakunin, S. Muellender, Frederik Bijkerk

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength range, based on measured B and B4C optical constants. We show that the wavelength of optimal single mirror reflectance for boron based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelengthintegrated reflectance for ideal 10-multilayer-mirror stacks show that a B-based optical column can be optimized for a wavelength larger than 6.65 nm.
Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
EditorsPatrick P. Naulleau, Obert R. Wood II
Place of PublicationBellingham, WA
PublisherSPIE
Number of pages5
ISBN (Print)9780819489784
DOIs
Publication statusPublished - 13 Mar 2012
EventSPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012 - San Jose Convention Center and San Jose Marriott, San Jose, United States
Duration: 12 Feb 201216 Feb 2012
Conference number: 3

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume8322
ISSN (Print)0277-786X

Conference

ConferenceSPIE Conference on Extreme Ultraviolet (EUV) Lithography III, 2012
CountryUnited States
CitySan Jose
Period12/02/1216/02/12

Keywords

  • PhysicsIndustriele produktie en technologie
  • IR-81732

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