Wavelength separation from extreme ultraviolet mirrors using phaseshift reflection

Toine van den Boogaard; F.A. van Goor; Eric Louis; Frederik Bijkerk

doi:10.1364/OL.37.000160

Wavelength separation from extreme ultraviolet mirrors using phaseshift reflection

Toine van den Boogaard, F.A. van Goor, Eric Louis, Frederik Bijkerk

Research output: Contribution to journal › Article › Academic › peer-review

17 Citations (Scopus)

Abstract

A generic design and fabrication scheme of Mo/Si multilayer-grating phaseshift reflector systems is reported. Close to optimized extreme ultraviolet (EUV, λ=13.5 nm ) reflectance values up to 64% are demonstrated, while the diffractive properties can be exploited in spectral filtering applications. The results can contribute to a wavelength-unspecific solution for the suppression of λ>100 nm out-of-band radiation in EUV lithography.

Original language	English
Pages (from-to)	160-162
Number of pages	2
Journal	Optics letters
Volume	37
Issue number	2
DOIs	https://doi.org/10.1364/OL.37.000160
Publication status	Published - 10 Jan 2012

Keywords

IR-82231
METIS-288918

Access to Document

10.1364/OL.37.000160

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abstract = "A generic design and fabrication scheme of Mo/Si multilayer-grating phaseshift reflector systems is reported. Close to optimized extreme ultraviolet (EUV, λ=13.5 nm ) reflectance values up to 64% are demonstrated, while the diffractive properties can be exploited in spectral filtering applications. The results can contribute to a wavelength-unspecific solution for the suppression of λ>100 nm out-of-band radiation in EUV lithography.",

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AU - Louis, Eric

AU - Bijkerk, Frederik

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N2 - A generic design and fabrication scheme of Mo/Si multilayer-grating phaseshift reflector systems is reported. Close to optimized extreme ultraviolet (EUV, λ=13.5 nm ) reflectance values up to 64% are demonstrated, while the diffractive properties can be exploited in spectral filtering applications. The results can contribute to a wavelength-unspecific solution for the suppression of λ>100 nm out-of-band radiation in EUV lithography.

AB - A generic design and fabrication scheme of Mo/Si multilayer-grating phaseshift reflector systems is reported. Close to optimized extreme ultraviolet (EUV, λ=13.5 nm ) reflectance values up to 64% are demonstrated, while the diffractive properties can be exploited in spectral filtering applications. The results can contribute to a wavelength-unspecific solution for the suppression of λ>100 nm out-of-band radiation in EUV lithography.

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DO - 10.1364/OL.37.000160

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JF - Optics letters

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