Wet and dry etching techniques for the release of sub-micrometre perforated membranes

Stein Kuiper; Meint de Boer; Cees van Rijn; Wietze Nijdam; Gijs Krijnen; Miko Elwenspoek

doi:10.1088/0960-1317/10/2/312

Wet and dry etching techniques for the release of sub-micrometre perforated membranes

Stein Kuiper
, Meint de Boer
, Cees van Rijn
, Wietze Nijdam
, Gijs Krijnen
, Miko Elwenspoek

Research output: Contribution to journal › Article › Academic › peer-review

32 Citations (Scopus)

13 Downloads (Pure)

Abstract

For the production of microsieves we studied the release of perforated silicon nitride membranes from a silicon substrate. During the release by KOH etching the pressure build-up due to hydrogen gas formation can be quite large and cause rupture of the membrane. We explored the use of anisotropic etching with an SF6/O2 plasma to replace KOH etching. For sub-micrometre pores excellent results were obtained.

Original language	English
Pages (from-to)	171-174
Number of pages	4
Journal	Journal of micromechanics and microengineering
Volume	10
Issue number	10
DOIs	https://doi.org/10.1088/0960-1317/10/2/312
Publication status	Published - Jun 2000

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10.1088/0960-1317/10/2/312

Wet and dry etching techniques for the release of submicron perforated membranes
Kuiper, S., de Boer, M. J., van Rijn, C. J. M., Nijdam, W., Krijnen, G. J. M. & Elwenspoek, M. C., 12 Sept 1999, The 10th Micromechanics Europe Workshop, MME '99: September 27-28, 1999, Gif sur Yvette, France : proceedings. Orsay: Université Paris-sud, Institut d'Électronique Fondamentale, p. 168-171
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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abstract = "For the production of microsieves we studied the release of perforated silicon nitride membranes from a silicon substrate. During the release by KOH etching the pressure build-up due to hydrogen gas formation can be quite large and cause rupture of the membrane. We explored the use of anisotropic etching with an SF6/O2 plasma to replace KOH etching. For sub-micrometre pores excellent results were obtained.",

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AU - Kuiper, Stein

AU - de Boer, Meint

AU - van Rijn, Cees

AU - Nijdam, Wietze

AU - Krijnen, Gijs

AU - Elwenspoek, Miko

PY - 2000/6

Y1 - 2000/6

N2 - For the production of microsieves we studied the release of perforated silicon nitride membranes from a silicon substrate. During the release by KOH etching the pressure build-up due to hydrogen gas formation can be quite large and cause rupture of the membrane. We explored the use of anisotropic etching with an SF6/O2 plasma to replace KOH etching. For sub-micrometre pores excellent results were obtained.

AB - For the production of microsieves we studied the release of perforated silicon nitride membranes from a silicon substrate. During the release by KOH etching the pressure build-up due to hydrogen gas formation can be quite large and cause rupture of the membrane. We explored the use of anisotropic etching with an SF6/O2 plasma to replace KOH etching. For sub-micrometre pores excellent results were obtained.

U2 - 10.1088/0960-1317/10/2/312

DO - 10.1088/0960-1317/10/2/312

M3 - Article

SN - 0960-1317

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EP - 174

JO - Journal of micromechanics and microengineering

JF - Journal of micromechanics and microengineering

IS - 10

ER -

Wet and dry etching techniques for the release of sub-micrometre perforated membranes

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Wet and dry etching techniques for the release of submicron perforated membranes

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