Wet anisotropic etching for fluidic 1D nanochannels

J. Haneveld, Henricus V. Jansen, Johan W. Berenschot, Niels Roelof Tas, Michael Curt Elwenspoek

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    Abstract

    In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. The channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into <100> silicon using native oxide as a mask material and OPD ressist developer as the etchant. Sub-50 nm deep fluidic channels are formed after bonding the nanopatterned wafers with silicon of barofloat-glass wafers. The nanofabrication process is largely simplified by using native oxide as the main mast material. The etch depth of the nanochannels is limited by the thickness of the native ocide layer, and by the selectivity of the oxide/silicon etch rate (etimated to be at least 250 for <110> silicon at room temperature).
    Original languageEnglish
    Title of host publicationMicromechanics Europe Workshop, MME 2002
    Place of PublicationSinaia, Romania
    PublisherMicroMechanics Europe
    Pages47-50
    Number of pages4
    ISBN (Print)973-0-02472-3
    Publication statusPublished - 6 Oct 2002
    Event13th Micromechanics Europe Workshop, MME 2002 - Sinaia, Romania
    Duration: 6 Oct 20028 Oct 2002

    Workshop

    Workshop13th Micromechanics Europe Workshop, MME 2002
    Abbreviated titleMME
    CountryRomania
    CitySinaia
    Period6/10/028/10/02

    Keywords

    • METIS-207751
    • EWI-19711
    • IR-43929

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