Wet anisotropic etching for fluidic 1d nanochannels

J. Haneveld, Henricus V. Jansen, Johan W. Berenschot, Niels Roelof Tas, Michael Curt Elwenspoek

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    Abstract

    In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 110 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after bonding the nanopatterned wafers with silicon or borofloat-glass wafers. The nanofabrication process is significantly simplified by using native oxide as the main mask material. The etch depth of the nanochannels is limited by the thickness of the native oxide layer, and by the selectivity of the oxide/silicon etch rate (estimated to be at least 250 for 110 silicon at room temperature).
    Original languageUndefined
    Pages (from-to)S62-S66
    Number of pages5
    JournalJournal of micromechanics and microengineering
    Volume13
    Issue number4
    DOIs
    Publication statusPublished - 13 Jun 2003

    Keywords

    • EWI-11224
    • IR-46505
    • METIS-215195
    • TST-LIL: Laser Interference Lithography

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