Wet etching methods for perovskite substrates

V. Leca, Augustinus J.H.M. Rijnders, Gertjan Koster, David H.A. Blank, Horst Rogalla

Research output: Contribution to journalArticleAcademicpeer-review

14 Downloads (Pure)


In oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) are presented. In order to obtain high quality substrates, different etchants (NH4F + HF, HCl + NH4Cl, and HCl + HNO3) with various pH values have been studied. From Atomic Force Microscopy (AFM), in air, we conclude that, irrespective of the etchant that has been used, a substrate surface with a BOx terminated layer and atomically flat terraces without etch pits could be obtained. The pH-value and temperature of the etchant and the etching time, however, influence significantly the surface quality. Reflection high energy electron diffraction (RHEED) patterns confirmed the AFM results.
Original languageUndefined
Pages (from-to)O3.6.1-O3.6.4
Number of pages4
JournalMaterials Research Society symposia proceedings
Issue number587
Publication statusPublished - 2000


  • METIS-128715
  • IR-23916

Cite this