Why monatomic steps on Si(001) are always rough

Henricus J.W. Zandvliet, Herbert Wormeester, D.J. Wentink, D.J. Wentink, Arend van Silfhout, H.B. Elswijk

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Abstract

High temperature scanning tunneling microscopy (STM) measurments are performed to study the behavior of monatomic step edges on Si(001) at elevated temperatures. The freeze out temperature Tf, at which the roughness of these step edges is frozen out, is estimated to be well above the intrinsic roughening temperature Tr of the edges. This means that these step edges are always rough at room temperature. The 1D random walk behavior of the step edges, as determined from room temperature STM images, suggests that the step-step interaction is very weak compared to the kink formation energies.
Original languageUndefined
Pages (from-to)2122-2125
Number of pages4
JournalPhysical review letters
Volume70
Issue number70
DOIs
Publication statusPublished - 1993

Keywords

  • METIS-128881
  • IR-61216

Cite this

Zandvliet, H. J. W., Wormeester, H., Wentink, D. J., Wentink, D. J., van Silfhout, A., & Elswijk, H. B. (1993). Why monatomic steps on Si(001) are always rough. Physical review letters, 70(70), 2122-2125. https://doi.org/10.1103/PhysRevLett.70.2122