Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

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456 Citations (Scopus)
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Abstract

Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-μm standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3×0.25 mm2.
Original languageEnglish
Pages (from-to)275-282
Number of pages8
JournalIEEE journal of solid-state circuits
Volume39
Issue number2
DOIs
Publication statusPublished - Feb 2004

Fingerprint

Thermal noise
Low noise amplifiers
Noise figure
Bandwidth
Broadband amplifiers
Feedback
Electric potential

Keywords

  • wide band
  • EWI-14463
  • distortion canceling
  • METIS-220543
  • Broadband
  • noise canceling
  • IR-48797
  • noise cancellation
  • low-noise amplifier (LNA)

Cite this

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title = "Wide-band CMOS low-noise amplifier exploiting thermal noise canceling",
abstract = "Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-μm standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3×0.25 mm2.",
keywords = "wide band, EWI-14463, distortion canceling, METIS-220543, Broadband, noise canceling, IR-48797, noise cancellation, low-noise amplifier (LNA)",
author = "F. Bruccoleri and Klumperink, {Eric A.M.} and Bram Nauta",
year = "2004",
month = "2",
doi = "10.1109/JSSC.2003.821786",
language = "English",
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journal = "IEEE journal of solid-state circuits",
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Wide-band CMOS low-noise amplifier exploiting thermal noise canceling. / Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram.

In: IEEE journal of solid-state circuits, Vol. 39, No. 2, 02.2004, p. 275-282.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

AU - Bruccoleri, F.

AU - Klumperink, Eric A.M.

AU - Nauta, Bram

PY - 2004/2

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N2 - Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-μm standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3×0.25 mm2.

AB - Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-μm standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3×0.25 mm2.

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