Wideband Balun-LNA with Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling

S.C. Blaakmeer, Eric A.M. Klumperink, D.M.W. Leenaerts, Bram Nauta

Research output: Contribution to journalArticleAcademicpeer-review

373 Citations (Scopus)
223 Downloads (Pure)

Abstract

An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF < 3.5 dB and IIP2 > +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.
Original languageEnglish
Pages (from-to)1341-1350
Number of pages10
JournalIEEE journal of solid-state circuits
Volume43
Issue number302/6
DOIs
Publication statusPublished - 1 Apr 2008

Fingerprint

Broadband amplifiers
Low noise amplifiers
Noise figure
Transistors
Electric power utilization
Electric potential

Keywords

  • ICD-ULTRA-WIDEBAND TECHNIQUES IN CMOS
  • EWI-13037
  • IR-64863
  • METIS-251062

Cite this

@article{0b3139dde1894667b869fb23c95d40f8,
title = "Wideband Balun-LNA with Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling",
abstract = "An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF < 3.5 dB and IIP2 > +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.",
keywords = "ICD-ULTRA-WIDEBAND TECHNIQUES IN CMOS, EWI-13037, IR-64863, METIS-251062",
author = "S.C. Blaakmeer and Klumperink, {Eric A.M.} and D.M.W. Leenaerts and Bram Nauta",
note = "10.1109/JSSC.2008.922736",
year = "2008",
month = "4",
day = "1",
doi = "10.1109/JSSC.2008.922736",
language = "English",
volume = "43",
pages = "1341--1350",
journal = "IEEE journal of solid-state circuits",
issn = "0018-9200",
publisher = "IEEE",
number = "302/6",

}

Wideband Balun-LNA with Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling. / Blaakmeer, S.C.; Klumperink, Eric A.M.; Leenaerts, D.M.W.; Nauta, Bram.

In: IEEE journal of solid-state circuits, Vol. 43, No. 302/6, 01.04.2008, p. 1341-1350.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Wideband Balun-LNA with Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling

AU - Blaakmeer, S.C.

AU - Klumperink, Eric A.M.

AU - Leenaerts, D.M.W.

AU - Nauta, Bram

N1 - 10.1109/JSSC.2008.922736

PY - 2008/4/1

Y1 - 2008/4/1

N2 - An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF < 3.5 dB and IIP2 > +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.

AB - An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF < 3.5 dB and IIP2 > +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.

KW - ICD-ULTRA-WIDEBAND TECHNIQUES IN CMOS

KW - EWI-13037

KW - IR-64863

KW - METIS-251062

U2 - 10.1109/JSSC.2008.922736

DO - 10.1109/JSSC.2008.922736

M3 - Article

VL - 43

SP - 1341

EP - 1350

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

SN - 0018-9200

IS - 302/6

ER -