Work function characterization of electroactive materials using an E MOSFET

T.V.A. Dam; Wouter Olthuis; Piet Bergveld

doi:10.1109/JSEN.2004.827208

Work function characterization of electroactive materials using an E MOSFET

T.V.A. Dam, Wouter Olthuis, Piet Bergveld

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Materials with redox properties have been widely used in sensing applications. Understanding the redox properties of these materials is an important issue. In order to investigate the redox properties, there are several methods, such as using the Kelvin probe and a conductivity sensor, or using other well-known electrochemical techniques. In this paper, we introduce another possibility to characterize redox materials by investigating their work function using an electrolyte metal-oxide semiconductor field effect transistor (/sup E/MOSFET) device, in which the studied redox material is applied as gate electrode. In the /sup E/MOSFET, the conductivity of the channel is modulated by the work function of the studied material. The change in the work function of a redox material due to electrically and chemically induced processes will be shown by an example of the /sup E/MOSFET having a potassium ferric ferrocyanide gate.

Original language	Undefined
Pages (from-to)	284-287
Number of pages	4
Journal	IEEE sensors journal
Volume	4
Issue number	3
DOIs	https://doi.org/10.1109/JSEN.2004.827208
Publication status	Published - 2004

Keywords

METIS-218750
IR-47834

Access to Document

10.1109/JSEN.2004.827208

01294906

Cite this

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title = "Work function characterization of electroactive materials using an E MOSFET",

abstract = "Materials with redox properties have been widely used in sensing applications. Understanding the redox properties of these materials is an important issue. In order to investigate the redox properties, there are several methods, such as using the Kelvin probe and a conductivity sensor, or using other well-known electrochemical techniques. In this paper, we introduce another possibility to characterize redox materials by investigating their work function using an electrolyte metal-oxide semiconductor field effect transistor (/sup E/MOSFET) device, in which the studied redox material is applied as gate electrode. In the /sup E/MOSFET, the conductivity of the channel is modulated by the work function of the studied material. The change in the work function of a redox material due to electrically and chemically induced processes will be shown by an example of the /sup E/MOSFET having a potassium ferric ferrocyanide gate.",

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T1 - Work function characterization of electroactive materials using an E MOSFET

AU - Dam, T.V.A.

AU - Olthuis, Wouter

AU - Bergveld, Piet

PY - 2004

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N2 - Materials with redox properties have been widely used in sensing applications. Understanding the redox properties of these materials is an important issue. In order to investigate the redox properties, there are several methods, such as using the Kelvin probe and a conductivity sensor, or using other well-known electrochemical techniques. In this paper, we introduce another possibility to characterize redox materials by investigating their work function using an electrolyte metal-oxide semiconductor field effect transistor (/sup E/MOSFET) device, in which the studied redox material is applied as gate electrode. In the /sup E/MOSFET, the conductivity of the channel is modulated by the work function of the studied material. The change in the work function of a redox material due to electrically and chemically induced processes will be shown by an example of the /sup E/MOSFET having a potassium ferric ferrocyanide gate.

AB - Materials with redox properties have been widely used in sensing applications. Understanding the redox properties of these materials is an important issue. In order to investigate the redox properties, there are several methods, such as using the Kelvin probe and a conductivity sensor, or using other well-known electrochemical techniques. In this paper, we introduce another possibility to characterize redox materials by investigating their work function using an electrolyte metal-oxide semiconductor field effect transistor (/sup E/MOSFET) device, in which the studied redox material is applied as gate electrode. In the /sup E/MOSFET, the conductivity of the channel is modulated by the work function of the studied material. The change in the work function of a redox material due to electrically and chemically induced processes will be shown by an example of the /sup E/MOSFET having a potassium ferric ferrocyanide gate.

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KW - IR-47834

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DO - 10.1109/JSEN.2004.827208

M3 - Article

VL - 4

SP - 284

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JO - IEEE sensors journal

JF - IEEE sensors journal

SN - 1530-437X

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