Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.
|Number of pages||4|
|Publication status||Published - 27 Oct 2008|
|Event||3rd European Microwave Integrated Circuits Conference, EuMIC 2008 - Amsterdam, Netherlands|
Duration: 27 Oct 2008 → 28 Oct 2008
Conference number: 3
|Conference||3rd European Microwave Integrated Circuits Conference, EuMIC 2008|
|Period||27/10/08 → 28/10/08|