X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

J. Janssen; M van Heijningen; K.P. Hilton; J.O. Maclean; D.J. Wallis; J. Powell; M. Uren; T. Martin; Frank Edward van Vliet

doi:10.1109/EMICC.2008.4772261

X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

J. Janssen, M van Heijningen, K.P. Hilton, J.O. Maclean, D.J. Wallis, J. Powell, M. Uren, T. Martin, Frank Edward van Vliet

Research output: Contribution to conference › Paper › Academic › peer-review

15 Citations (Scopus)

Abstract

Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.

Original language	English
Pages	190-193
Number of pages	4
DOIs	https://doi.org/10.1109/EMICC.2008.4772261
Publication status	Published - 27 Oct 2008
Event	3rd European Microwave Integrated Circuits Conference, EuMIC 2008 - Amsterdam, Netherlands Duration: 27 Oct 2008 → 28 Oct 2008 Conference number: 3

Conference

Conference	3rd European Microwave Integrated Circuits Conference, EuMIC 2008
Abbreviated title	EuMIC
Country	Netherlands
City	Amsterdam
Period	27/10/08 → 28/10/08

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@conference{47f025e1202449479016d8f7fefd4aaa,

title = "X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling",

abstract = "Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.",

author = "J. Janssen and {van Heijningen}, M and K.P. Hilton and J.O. Maclean and D.J. Wallis and J. Powell and M. Uren and T. Martin and {van Vliet}, {Frank Edward}",

year = "2008",

month = oct,

day = "27",

doi = "10.1109/EMICC.2008.4772261",

language = "English",

pages = "190--193",

note = "3rd European Microwave Integrated Circuits Conference, EuMIC 2008, EuMIC ; Conference date: 27-10-2008 Through 28-10-2008",

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X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling. / Janssen, J.; van Heijningen, M; Hilton, K.P.; Maclean, J.O.; Wallis, D.J.; Powell, J.; Uren, M.; Martin, T.; van Vliet, Frank Edward.

2008. 190-193 Paper presented at 3rd European Microwave Integrated Circuits Conference, EuMIC 2008, Amsterdam, Netherlands.

Research output: Contribution to conference › Paper › Academic › peer-review

TY - CONF

T1 - X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

AU - Janssen, J.

AU - van Heijningen, M

AU - Hilton, K.P.

AU - Maclean, J.O.

AU - Wallis, D.J.

AU - Powell, J.

AU - Uren, M.

AU - Martin, T.

AU - van Vliet, Frank Edward

N1 - Conference code: 3

PY - 2008/10/27

Y1 - 2008/10/27

N2 - Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.

AB - Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.

U2 - 10.1109/EMICC.2008.4772261

DO - 10.1109/EMICC.2008.4772261

M3 - Paper

SP - 190

EP - 193

T2 - 3rd European Microwave Integrated Circuits Conference, EuMIC 2008

Y2 - 27 October 2008 through 28 October 2008

ER -