X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

J. Janssen, M van Heijningen, K.P. Hilton, J.O. Maclean, D.J. Wallis, J. Powell, M. Uren, T. Martin, Frank Edward van Vliet

    Research output: Contribution to conferencePaperAcademicpeer-review

    15 Citations (Scopus)

    Abstract

    Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.
    Original languageEnglish
    Pages190-193
    Number of pages4
    DOIs
    Publication statusPublished - 27 Oct 2008
    Event3rd European Microwave Integrated Circuits Conference, EuMIC 2008 - Amsterdam, Netherlands
    Duration: 27 Oct 200828 Oct 2008
    Conference number: 3

    Conference

    Conference3rd European Microwave Integrated Circuits Conference, EuMIC 2008
    Abbreviated titleEuMIC
    CountryNetherlands
    CityAmsterdam
    Period27/10/0828/10/08

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