X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

J.P.B. Janssen; M van Heijningen; G. Provenzano; Frank Edward van Vliet

doi:10.1109/CSICS.2008.23

X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

J.P.B. Janssen, M van Heijningen, G. Provenzano, Frank Edward van Vliet

Research output: Contribution to conference › Paper › peer-review

52 Citations (Scopus)

8 Downloads (Pure)

Abstract

Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

Original language	Undefined
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/CSICS.2008.23
Publication status	Published - 12 Oct 2008
Event	Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE - USA Monterey, CA Duration: 12 Oct 2008 → 15 Oct 2008

Conference

Conference	Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Period	12/10/08 → 15/10/08
Other	12-15 Oct 2008

Keywords

EWI-20014
IR-76698

Access to Document

10.1109/CSICS.2008.23

http://eprints.eemcs.utwente.nl/secure2/20014/01/CSICS2008.pdf

Cite this

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title = "X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling",

abstract = "Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.",

keywords = "EWI-20014, IR-76698",

author = "J.P.B. Janssen and {van Heijningen}, M and G. Provenzano and {van Vliet}, {Frank Edward}",

year = "2008",

month = oct,

day = "12",

doi = "10.1109/CSICS.2008.23",

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pages = "1--4",

note = "Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE ; Conference date: 12-10-2008 Through 15-10-2008",

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T1 - X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

AU - Janssen, J.P.B.

AU - van Heijningen, M

AU - Provenzano, G.

AU - van Vliet, Frank Edward

PY - 2008/10/12

Y1 - 2008/10/12

N2 - Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

AB - Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

KW - EWI-20014

KW - IR-76698

U2 - 10.1109/CSICS.2008.23

DO - 10.1109/CSICS.2008.23

M3 - Paper

SP - 1

EP - 4

T2 - Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Y2 - 12 October 2008 through 15 October 2008

ER -