X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

J.P.B. Janssen, M van Heijningen, G. Provenzano, Frank Edward van Vliet

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    Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.
    Original languageUndefined
    Number of pages4
    Publication statusPublished - 12 Oct 2008
    EventCompound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE - USA Monterey, CA
    Duration: 12 Oct 200815 Oct 2008


    ConferenceCompound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
    Other12-15 Oct 2008


    • EWI-20014
    • IR-76698

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