X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

J.P.B. Janssen, M van Heijningen, G. Provenzano, Frank Edward van Vliet

Research output: Contribution to conferencePaperAcademicpeer-review

35 Citations (Scopus)

Abstract

Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.
Original languageUndefined
Pages1-4
Number of pages4
DOIs
Publication statusPublished - 12 Oct 2008

Keywords

  • EWI-20014
  • IR-76698

Cite this

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title = "X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling",
abstract = "Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.",
keywords = "EWI-20014, IR-76698",
author = "J.P.B. Janssen and {van Heijningen}, M and G. Provenzano and {van Vliet}, {Frank Edward}",
year = "2008",
month = "10",
day = "12",
doi = "10.1109/CSICS.2008.23",
language = "Undefined",
pages = "1--4",

}

X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling. / Janssen, J.P.B.; van Heijningen, M; Provenzano, G.; van Vliet, Frank Edward.

2008. 1-4.

Research output: Contribution to conferencePaperAcademicpeer-review

TY - CONF

T1 - X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

AU - Janssen, J.P.B.

AU - van Heijningen, M

AU - Provenzano, G.

AU - van Vliet, Frank Edward

PY - 2008/10/12

Y1 - 2008/10/12

N2 - Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

AB - Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

KW - EWI-20014

KW - IR-76698

U2 - 10.1109/CSICS.2008.23

DO - 10.1109/CSICS.2008.23

M3 - Paper

SP - 1

EP - 4

ER -