X-ray diffraction analysis of damage and doping effects in low-dose, high-energy implanted silicon

J.G.E. Klappe, I. Barsony, T.W. Ryan

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings Symposium Materials Research Society, Vol. 235
    Place of PublicationBoston
    Pages185-190
    Number of pages0
    Publication statusPublished - 2 Dec 1992

    Keywords

    • METIS-113999

    Cite this

    Klappe, J. G. E., Barsony, I., & Ryan, T. W. (1992). X-ray diffraction analysis of damage and doping effects in low-dose, high-energy implanted silicon. In Proceedings Symposium Materials Research Society, Vol. 235 (pp. 185-190). Boston.