TY - JOUR
T1 - X-ray magnetic circular dichroism and resonant photomission of V(TCNE)x hybrid magnets
AU - Tengstedt, C.
AU - De Jong, M. P.
AU - Kanciurzewska, A.
AU - Carlegrim, E.
AU - Fahlman, M.
PY - 2006
Y1 - 2006
N2 - Thin films of V(TCNE)x were deposited in ultrahigh vacuum using a film growth technique based on in situ chemical vapor deposition of tetracyanoethylene, TCNE, and bis-benzene vanadium, V(C6H6)2. The in situ preparation method enabled, for the first time, experimental analysis of oxygen-free films. X-ray magnetic circular dichroism measurements recorded at the V L2,3 edge confirmed room temperature magnetic ordering. A combination of conventional photoelectron spectroscopy (PES) and resonant photoemission (RPE) measured at the V L3 edge shows that the highest occupied electronic state is V(3d) derived. The rearrangements of the TCNE- related valence electronic states observed in PES and the evidence of V(3d) and TCNE- π(π*) orbital overlap contained in RPE spectra, indicate that strong, covalent type bonding occurs between the vanadium and the TCNE molecules.
AB - Thin films of V(TCNE)x were deposited in ultrahigh vacuum using a film growth technique based on in situ chemical vapor deposition of tetracyanoethylene, TCNE, and bis-benzene vanadium, V(C6H6)2. The in situ preparation method enabled, for the first time, experimental analysis of oxygen-free films. X-ray magnetic circular dichroism measurements recorded at the V L2,3 edge confirmed room temperature magnetic ordering. A combination of conventional photoelectron spectroscopy (PES) and resonant photoemission (RPE) measured at the V L3 edge shows that the highest occupied electronic state is V(3d) derived. The rearrangements of the TCNE- related valence electronic states observed in PES and the evidence of V(3d) and TCNE- π(π*) orbital overlap contained in RPE spectra, indicate that strong, covalent type bonding occurs between the vanadium and the TCNE molecules.
UR - http://www.scopus.com/inward/record.url?scp=33144480155&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.96.057209
DO - 10.1103/PhysRevLett.96.057209
M3 - Article
AN - SCOPUS:33144480155
SN - 0031-9007
VL - 96
JO - Physical review letters
JF - Physical review letters
IS - 5
M1 - 057209
ER -