X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Nina Hrauda*, Jianjun Zhang, Eugen Wintersberger, Tanja Etzelstorfer, Bernhard Mandl, Julian Stangl, Dina Carbone, Vaclav Holý, Vladimir Jovanović, Cleber Biasotto, Lis K. Nanver, Jürgen Moers, Detlev Grützmacher, Günther Bauer

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

50 Citations (Scopus)

Abstract

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.

Original languageEnglish
Pages (from-to)2875-2880
Number of pages6
JournalNano letters
Volume11
Issue number7
DOIs
Publication statusPublished - 13 Jul 2011
Externally publishedYes

Keywords

  • finite element simulations
  • ordered island growth
  • semiconductor nanostructures
  • silicon germanium
  • structural investigations
  • X-ray nanodiffraction

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    Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., ... Bauer, G. (2011). X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor. Nano letters, 11(7), 2875-2880. https://doi.org/10.1021/nl2013289