Young's modulus and residual stress of GeSbTe phase-change thin films

H. Nazeer, Harish Bhaskaran, L.A. Woldering, Leon Abelmann

    Research output: Contribution to journalArticleAcademicpeer-review

    5 Citations (Scopus)
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    Abstract

    The mechanical properties of phase change materials alter when the phase is transformed. In this paper, we report on experiments that determine the change in crucial parameters such as Young's modulus and residual stress for two of the most widely employed compositions of phase change films, Ge1Sb2Te4 and Ge2Sb2Te5, using an accurate microcantilever methodology. The results support understanding of the exact mechanisms that account for the phase transition, especially with regard to stress, which leads to drift in non-volatile data storage. Moreover, detailed information on the change in mechanical properties will enable the design of novel low-power nonvolatile MEMS.
    Original languageUndefined
    Pages (from-to)69-75
    Number of pages7
    JournalThin solid films
    Volume592
    Issue numberPart A
    DOIs
    Publication statusPublished - 1 Oct 2015

    Keywords

    • EWI-26638
    • IR-98862
    • METIS-315130

    Cite this

    Nazeer, H. ; Bhaskaran, Harish ; Woldering, L.A. ; Abelmann, Leon. / Young's modulus and residual stress of GeSbTe phase-change thin films. In: Thin solid films. 2015 ; Vol. 592, No. Part A. pp. 69-75.
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    Young's modulus and residual stress of GeSbTe phase-change thin films. / Nazeer, H.; Bhaskaran, Harish; Woldering, L.A.; Abelmann, Leon.

    In: Thin solid films, Vol. 592, No. Part A, 01.10.2015, p. 69-75.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Young's modulus and residual stress of GeSbTe phase-change thin films

    AU - Nazeer, H.

    AU - Bhaskaran, Harish

    AU - Woldering, L.A.

    AU - Abelmann, Leon

    N1 - eemcs-eprint-26638

    PY - 2015/10/1

    Y1 - 2015/10/1

    N2 - The mechanical properties of phase change materials alter when the phase is transformed. In this paper, we report on experiments that determine the change in crucial parameters such as Young's modulus and residual stress for two of the most widely employed compositions of phase change films, Ge1Sb2Te4 and Ge2Sb2Te5, using an accurate microcantilever methodology. The results support understanding of the exact mechanisms that account for the phase transition, especially with regard to stress, which leads to drift in non-volatile data storage. Moreover, detailed information on the change in mechanical properties will enable the design of novel low-power nonvolatile MEMS.

    AB - The mechanical properties of phase change materials alter when the phase is transformed. In this paper, we report on experiments that determine the change in crucial parameters such as Young's modulus and residual stress for two of the most widely employed compositions of phase change films, Ge1Sb2Te4 and Ge2Sb2Te5, using an accurate microcantilever methodology. The results support understanding of the exact mechanisms that account for the phase transition, especially with regard to stress, which leads to drift in non-volatile data storage. Moreover, detailed information on the change in mechanical properties will enable the design of novel low-power nonvolatile MEMS.

    KW - EWI-26638

    KW - IR-98862

    KW - METIS-315130

    U2 - 10.1016/j.tsf.2015.08.049

    DO - 10.1016/j.tsf.2015.08.049

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    JF - Thin solid films

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