TY - JOUR
T1 - Yttria-Ceria stabilized tetragonal zirconia polycrystals
T2 - Sintering, grain growth and grain boundary segregation
AU - Boutz, M.M.R.
AU - Winnubst, A.J.A.
AU - Burggraaf, A.J.
PY - 1994
Y1 - 1994
N2 - An analysis is presented of grain growth and densification of yttria-ceria stabilized tetragonal zirconia polycrystals (Y, Ce-TZPs) using both isothermal and non-isothermal techniques. The characteristics of Y, Ce-TZPs are compared to those of Y-TZP and Ce-TZP and the effect of increasing ceria concentration at constant yttria content is evaluated. During non-isothermal sintering two regimes are distinguished: below 900–1000°C the neck area increases strongly by surface diffusion accompanied by only very little densification and grain growth, in the temperature interval 900–1000°C to 1200°C the materials densify to 95% of the theoretical density via a grain boundary diffusion mechanism and grain growth accelerates. Dense materials with grain sizes of 0·15–0·20 μm can be prepared by isothermal sintering at 1100–1150°C.
In Y, Ce-TZP it is yttrium that segregates to the grain boundaries at 1150–1400°C. The yttrium content of the grain boundaries in Y, Ce-TZP is independent of temperature and ceria-concentration under the investigated experimental conditions. Grain growth in dense TZP is controlled by a solute drag mechanism at elevated temperatures (>1200°C); this drag is highest for Y-TZP, absent for Ce-TZP and moderate for Y, Ce-TZP.
AB - An analysis is presented of grain growth and densification of yttria-ceria stabilized tetragonal zirconia polycrystals (Y, Ce-TZPs) using both isothermal and non-isothermal techniques. The characteristics of Y, Ce-TZPs are compared to those of Y-TZP and Ce-TZP and the effect of increasing ceria concentration at constant yttria content is evaluated. During non-isothermal sintering two regimes are distinguished: below 900–1000°C the neck area increases strongly by surface diffusion accompanied by only very little densification and grain growth, in the temperature interval 900–1000°C to 1200°C the materials densify to 95% of the theoretical density via a grain boundary diffusion mechanism and grain growth accelerates. Dense materials with grain sizes of 0·15–0·20 μm can be prepared by isothermal sintering at 1100–1150°C.
In Y, Ce-TZP it is yttrium that segregates to the grain boundaries at 1150–1400°C. The yttrium content of the grain boundaries in Y, Ce-TZP is independent of temperature and ceria-concentration under the investigated experimental conditions. Grain growth in dense TZP is controlled by a solute drag mechanism at elevated temperatures (>1200°C); this drag is highest for Y-TZP, absent for Ce-TZP and moderate for Y, Ce-TZP.
U2 - 10.1016/0955-2219(94)90106-6
DO - 10.1016/0955-2219(94)90106-6
M3 - Article
SN - 0955-2219
VL - 13
SP - 89
EP - 102
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
IS - 2
ER -